Synthesis of large-area, atomically thin transition metal dichalcogenides (TMDs) on diverse substrates is of central importance for the large-scale fabrication of flexible devices and heterojunction-based devices. In this work, we successfully synthesized a large area of highly-crystalline MoSe2 atomic layers on SiO2/Si, mica and Si substrates using a simple chemical vapour deposition (CVD) method at atmospheric pressure. Atomic force microscopy (AFM) and Raman spectroscopy reveal that the as-grown ultrathin MoSe2 layers change from a single layer to a few layers. Photoluminescence (PL) spectroscopy demonstrates that while the multi-layer MoSe2 shows weak emission peaks, the monolayer has a much stronger emission peak at ∼ 1.56 eV, indicating the transition from an indirect to a direct bandgap. Transmission electron microscopy (TEM) analysis confirms the single-crystallinity of MoSe2 layers with a hexagonal structure. In addition, the photoresponse performance of photodetectors based on MoSe2 monolayer was studied for the first time. The devices exhibit a rapid response of ∼ 60 ms and a good photoresponsivity of ∼ 13 mA/W (using a 532 nm laser at an intensity of 1 mW mm(-2) and a bias of 10 V), suggesting that MoSe2 monolayer is a promising material for photodetection applications.

Anisotropic layered semiconductors have attracted significant interest due to the huge possibility of bringing new functionalities to thermoelectric, electronic and optoelectronic devices. Currently, most reports on anisotropy have concentrated on black phosphorus and ReS2, less effort has been contributed to other layered materials. In this work, two-dimensional (2D) orthorhombic SnS flakes on a large scale have been successfully synthesized via a simple physical vapor deposition method. Angle-dependent Raman spectroscopy indicated that the orthorhombic SnS flakes possess a strong anisotropic Raman response. Under a parallel-polarization configuration, the peak intensity of Ag (190.7 cm(-1)) Raman mode reaches the maximum when incident light polarization is parallel to the armchair direction of the 2D SnS flakes, which strongly suggests that the Ag (190.7 cm(-1)) mode can be used to determine the crystallographic orientation of the 2D SnS. In addition, temperature-dependent Raman characterization confirmed that the 2D SnS flakes have a higher sensitivity to temperature than graphene, MoS2 and black phosphorus. These results are useful for the future studies of the optical and thermal properties of 2D orthorhombic SnS.

This review highlights recent advances made using nanoscale metal–organic frameworks (NMOFs) for designing cargo-delivery systems.