The ultra-thin 304 stainless steel sheet will be used in flexible displays for substrate material. In chemical mechanical polishing of ultra-thin stainless steel, the pH value of polishing slurry has an important influence on the material removal rate (MRR). In this paper, the influences of pH regulator in slurry on MRR had been studied in CMP of ultra-thin 304 stainless steel based on alumina (Al2O3) abrasive in acidic polishing slurry. The research results show that, in the same conditions, different pH value had a different chemical action mechanism and a different MRR. And also, different oxidant with pH regulator had a different chemical action mechanism and a different MRR. The research results can provide the reference for studying the slurry in CMP of ultra-thin stainless steel.
Chemical mechanical polishing (CMP) is the most effective technology to achieve ultra-smooth without damage surface in ultra-precision machining of stainless steel substrate. In this paper, according to the slurry ingredients obtained by former research, the influences of the CMP process parameters, such as the rotational velocity of the platen and the carrier, the polishing pressure and the abrasive size on the material removal rate (MRR), have been studied in CMP stainless steel substrate based on the alumina (Al2O3) abrasive. The research results show that the material removal rate increases with the increase of the abrasive size, the rotational velocity of the platen and the polishing pressure significantly and the surface roughness increases with the increase of the abrasive size. This study results will provide the reference for optimizing the process parameters and researching the material removal mechanism in CMP stainless steel sheet.
Flexible displays will become the mainstream display of next generation, so the manufacturing technology of the flexible display substrate is one of very important technologies. In this paper, according to orthogonal design, the composition selection and optimization of chemical mechanical polishing (CMP) slurry based on alumina abrasive had been done in CMP ultra-thin stainless steel surface by a lot of tests. The CMP slurry based on alumina abrasive for ultra-thin stainless steel surface had been obtained. According to the test results, the material removal rate (MRR) is about 177 nm/min and the surface roughness (Ra) is about 0.018μm.
In this study, according to physic-chemical characteristic of the SiC crystals, we analyzed and researched the role of pH modifier in SiC crystal substrate chemical mechanical polishing and the surface after polishing. We used different polish agents which was made up with inorganic and organic bases to experiment, and then analyzed the results. The parameters of the polishing specimen, such as the removal rate of material, surface scanning and the roughness, were analyzed and used to determine the different pH modifiers played different roles in the stability of polish agents and surface quality of the specimen.
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