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The structure and quality of intrinsic hydrogenated amorphous silicon thin films are studied with intended use as passivation layer in heterojunction silicon wafer solar cells. The thin film layers are formed by radio-frequency parallel-plate plasma-enhanced chemical vapor deposition. While the passivation quality of the films is found to improve steadily with increasing deposition temperature, a very narrow process window in terms of pressure variation is observed. The best effective lifetime is obtained at a hydrogen to silane dilution ratio of 1 and a pressure of 66.7 Pa for the used tool configuration. Raman crystallinity and Urbach energy obtained from fitting ellipsometry data confirm that the degradation of the passivation quality outside the process window is due to a phase change into microcrystalline silicon with different growth mechanisms and an increase in bonding related defects. Film growth mechanisms are proposed to account for the observed narrow process window, which are verified by optical emission spectroscopy measurements.

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We present an alternative method of depositing a high-quality passivation film for heterojunction silicon wafer solar cells, in this paper. The deposition of hydrogenated intrinsic amorphous silicon suboxide is accomplished by decomposing hydrogen, silane, and carbon dioxide in an industrial remote inductively coupled plasma platform. Through the investigation on CO 2 partial pressure and process temperature, excellent surface passivation quality and optical properties are achieved. It is found that the hydrogen content in the film is much higher than what is commonly reported in intrinsic amorphous silicon due to oxygen incorporation. The observed slow depletion of hydrogen with increasing temperature greatly enhances its process window as well. The effective lifetime of symmetrically passivated samples under the optimal condition exceeds 4.7 ms on planar -type Czochralski silicon wafers with a resistivity of 1 Ωcm, which is equivalent to an effective surface recombination velocity of less than 1.7 cms −1 and an implied open-circuit voltage ( oc ) of 741 mV. A comparison with several high quality passivation schemes for solar cells reveals that the developed inductively coupled plasma deposited films show excellent passivation quality. The excellent optical property and resistance to degradation make it an excellent substitute for industrial heterojunction silicon solar cell production.

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