Articles you may be interested inEffect of indium surfactant on stress relaxation by V-defect formation in GaN epilayers grown by metalorganic chemical vapor deposition J. Appl. Phys. 108, 093511 (2010); 10.1063/1.3487955 Strain effects on In x Al 1 − x N crystalline quality grown on GaN templates by metalorganic chemical vapor deposition J. Appl. Phys. 107, 043515 (2010); 10.1063/1.3305397 Indium migration paths in V-defects of InAlN grown by metal-organic vapor phase epitaxy Appl. Phys. Lett. 95, 071905 (2009); 10.1063/1.3204454
Study of defects evolution in GaN layers grown by metal-organic chemical vapor depositionNear-lattice-matched and highly compressive-strained In x Al 1−x N epilayers were grown on GaN templates by metalorganic chemical vapor deposition. The V-defects associated with screw-component threading dislocations ͑TDs͒ were found in all the In x Al 1−x N layers. Their origin and evolution were investigated through near-lattice-matched In 0.173 Al 0.827 N layers with different thicknesses. Furthermore, small V-defects not associated with TDs were also found in In x Al 1−x N layers with high In composition ͑x = 0.231͒. Stacking mismatch boundaries induced by lattice relaxation in In x Al 1−x N epilayers under large strain is believed to be another mechanism forming V-defects.
We report the effect of strain-induced indium clustering on the emission properties of InGaN/GaN multiple quantum wells grown with high indium composition by metalorganic chemical vapor deposition. Indium clustering confirmed by high-resolution transmission electron microscopy results in the redshift of the emission peak and the increase of the integrated photoluminescence (PL) intensity. We found that strong carrier localization in indium clustering induces the increases of the activation energy of PL integrated intensity, the temperature independence of PL decay profiles, and the intensity fluctuation of the cathodoluminescence images. All these observations suggest structurally and optically that the improved emission properties in the InGaN/GaN multiple quantum well with high indium composition are associated with the localized states in the strain-induced indium cluster.
Chemical bonding is the language
of logic for chemists.
Two new
resonance bonding models, ω-bonding and charge-shift (CS) bonding,
are gaining popularity among chemists. This study investigated the
Cu/Ag/Au bonding in BMX (B = H2O, H2S, NH3, and PH3; M = Cu, Ag, and Au; and X = F, Cl, Br,
and I) complexes using natural bond orbital (NBO) analysis, natural
resonance theory (NRT), and atoms in molecules (AIM) method. The main
aim is to reveal the relation between ω-bonding model and CS
bonding model via Cu/Ag/Au bonding. Our studies demonstrate that the
Cu/Ag/Au bonds exhibit the characteristics of both ω-bonding
and CS bonding. Further studies found that ω-bonding and CS
bonding models are equivalent and complement each other in understanding
the studied Cu/Ag/Au bonding. Another interesting finding is the implication
of the omega symbol in the ω-bonding model. These findings could
help to promote the communication and CS bonding understanding of
many more similar ω-bonded complexes.
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