Growth of Submicron AlGaN/GaN/AlGaN Heterostructures by Hydride Vapor Phase Epitaxy (HVPE)

Thick AlN layers grown by HVPE

“…Recently, HVPE technology has been modified to deposit high-quality AlN and AlGaN epitaxial layers on SiC [9,10] and sapphire substrates [11]. Device structures based on HVPE-grown AlN and AlGaN layers have been demonstrated, including high electron mobility transistors (HEMTs) [12] and light-emitting devices [13][14][15][16].…”

In situ stress measurements during MOCVD growth of AlGaN on SiC

“…In comparison to sapphire, the advantages of SiC substrates for AlGaN-based UV light emitting diodes [9,10] include a smaller lattice mismatch ({a sub Àa film }/a film designated e m ) to AlGaN, and the potential to fabricate vertically conducting devices. However, absorption of UV light by the SiC substrate decreases device efficiency [4].…”

Structural and optical properties of thick freestanding AlN films prepared by hydride vapor phase epitaxy

“…Hydride vapor phase epitaxy (HVPE) has been successfully employed to deposit AlN, AlGaN, and multi layer structures on a variety of 2 to 3 in. foreign substrates [3,4]. AlN films deposited on Si and SiC substrates, removed from the substrates by etching techniques, were used as seeds to grow AlN boules with a diameter ranging from 0.5 to 1.75 in.…”