Reaction of 2 equiv of the previously reported germolyl anion Li[C 4 Me 4 GeSi(SiMe 3 ) 3 ] with FeCl 2 (THT) 1.5 (THT ) tetrahydrothiophene) at low temperature gave the new bis-η 5 -germolyl complex [η 5 -C 4 Me 4 GeSi(SiMe 3 ) 3 ] 2 Fe (1), which was characterized by X-ray crystallography. Reaction of 1 with I 2 resulted in loss of the germolyl ligand as C 4 Me 4 Ge(I)[Si(SiMe 3 ) 3 ], while the reaction with MeLi produced the ferrocenophane ansa-(Me 3 Si) 2 Si(η 5 -GeC 4 Me 4 ) 2 Fe (4). X-ray crystallographic analysis of this compound revealed that the Ge atoms are displaced significantly out of the C 4 plane. Attempts to induce the ring-opening polymerization of 4 were unsuccessful.
In order to enable high-k metal gate technology, new CMP steps and slurries are needed to meet the stringent planarity and defect requirements for device performance. This paper will describe several of these slurry technologies in detail, including poly-openpolish, Aluminum CMP, and improvements required in Tungsten polishing. The keys to these technologies are outlined and polishing performance given in detail. The critical mechanisms involved in the material polishing for each of these steps are also introduced. All of these new technologies are needed in order to build a successful high-k metal gate device for advanced node integration via a replacement gate build strategy.
Chemical mechanical planarization (CMP) of copper and barrier interconnects are significant value-adding steps in semiconductor manufacturing. There are a number of materials, designs, processes, and requirements to achieve a successful system. Variables that impact CMP include the selection of the polishing tool, pad, slurry, conditioner, ring, cleans and the elements of polishing processes including down-force, flow rate, time, temperature, friction, conditioning, and cross-contamination. Given the multiplicity of semiconductor design, materials, and processes, it is not surprising that CMP varies from fab to fab. We describe in this Paper, Cabot Microelectronics' approach to helping our customers develop an integrated system of slurry, pad, and auxiliary processes to achieve improved CMP process performance, yields, and costs.
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