Direct measurements of the electron and hole mobility-lifetime products, μτ, on a 10μm thick hydrogenated amorphous silicon (a-Si:H) pi- n solar cell are presented. The μτ products, determined from charge collection using strongly absorbed light are μτ|h = 2.2 × 10−8cm2V−1 and μτ|e = 3.0 × 10−7cm2V−1, for holes,and electrons, respectively. Measurements of the drift length, ld = μτ|e + μτ|h, using uniformly absorbed light and analyzed using the uniform field model,1 give ld = 2.9 × 10−7 cm2 V−1 s−1. These results are the first experimental evidence that the carrier with the larger, μτ product determines the photovoltaic behavior. Evidence for space charge limited transport of photogenerated holes is also be presented.
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