1988
DOI: 10.1557/proc-118-593
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A Simplified Approach to Solar Cell Modeling

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Cited by 5 publications
(5 citation statements)
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“…It increases with increasing intensity but unlike the V oc , the V mpp saturates at illumination intensities close to AM1.5. This observation is consistent with known reduction of fill factor in thin-film silicon solar cells at illumination intensities above one sun due to the screening of the built-in field in absorber layer at high densities of the excess charge carriers [43]. The V oc and V mpp values of the triple B over a wide range of illumination intensity matches the redox voltage of the battery hence a robust solution for practical application.…”
Section: Integrated Solar Cell and Battery Measurement Set Upsupporting
confidence: 85%
“…It increases with increasing intensity but unlike the V oc , the V mpp saturates at illumination intensities close to AM1.5. This observation is consistent with known reduction of fill factor in thin-film silicon solar cells at illumination intensities above one sun due to the screening of the built-in field in absorber layer at high densities of the excess charge carriers [43]. The V oc and V mpp values of the triple B over a wide range of illumination intensity matches the redox voltage of the battery hence a robust solution for practical application.…”
Section: Integrated Solar Cell and Battery Measurement Set Upsupporting
confidence: 85%
“…Experimentally, it does not appear that photogenerated space charge can produce significant field distortion in the usual a-Si:H p-i-n cell at room temperature [135]. However, at low temperature or for thick cel_, a photogenerated space charge will distort the electric field and the simple uniform field model cannot be used.…”
Section: T-3675mentioning
confidence: 99%
“…In fact, if space charge due to the photogenerated carriers can be neglected, then the hole will not limit the current because electrons and holes each make equal contributions to the current [135]. A carrier's contribution is, at low fields, equal to I_/L because the carrier drifts a distance equal to its drift length before belng trapped.…”
Section: T-3675mentioning
confidence: 99%
“…Crandall, et al [2], modeled the performance of aSi:H cells operating near l-sun intensity in terms of voltage-dependent collection caused by field collapse due to higher carrier densities or lower operating temperatures. The model predicts a softening of the l-V curve as he observed, but applying it to our observations of reduced AC photocurrents at small spot size (high intensities) remains a problem.…”
Section: Discussionmentioning
confidence: 99%
“…Crandall, et al [2], developed a model for voltage-dependent collection in a-Si:H solar cells resulting from a collapse of the space-charge region with increasing carrier generation (up to 2 suns) and enhanced with lower operating temperatures. The model appears to fit the deterioration of the AC FF adequately when intensities are on the order of 1 sun, but the applicability of the model begins to fail in cases when I-V is diminished with small spot sizes (high intensities), even under reverse bias conditions.…”
Section: Introductionmentioning
confidence: 99%