A Metal-to-Metal (M2M) antifuse is formed using hydrogenated amorphous silicon as a dielectric material between two refractory metal electrodes. The M2M antifuse is used as a programmable device in an FPGA, where it is placed between two interconnect metal layers of a Logic CMOS process. The M2M device may then be programmed to interconnect logic circuits. The resulting programmed link is an alloy of amorphous silicon and barrier metal that forms a low resistance path between the logic circuits.
The five invited papers and 11 contributed papers in this special issue discuss topics such as process variation, device variability, hierarchical modeling tools, and address challenges such as device mismatch and SRAM noise margin variability
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