Short total syntheses of the Leucetta-derived alkaloids, kealiinines A-C, have been accomplished using an intramolecular Friedel-Crafts-dehydration sequence of a bis benzylic diol. The precursor diol was obtained through a series of position specific Grignard reactions from 1-methyl-4,5-diiodoimidazole. C2-Azidation and hydrogenation of the azide then provided the reported structures of kealiinines A-C. While the 1H NMR data did not completely match for these materials, the HPLC data were consistent with the assigned structure of these materials.
Surface effects on the optical and photocatalytic properties of graphene-like ZnO:Eu3+ nanosheets J. Appl. Phys. 113, 033514 (2013) Enhanced dielectric properties of BaTiO3/poly(vinylidene fluoride) nanocomposites for energy storage applications J. Appl. Phys. 113, 034105 (2013) Formation and optical absorption property of nanometer metallic colloids in Zn and Ag dually implanted silica: Synthesis of the modified Ag nanoparticles J. Appl. Phys. 113, 034304 (2013) Graphene-Fe3O4 nanohybrids: Synthesis and excellent electromagnetic absorption properties J. Appl. Phys. 113, 024314 (2013) Topological view of the thermal stability of nanotwinned copper Appl. Phys. Lett. 102, 011905 (2013) Additional information on Appl. Phys. Lett.
Three-dimensional integrated circuits (3D ICs) attract much interest due to several advantages over traditional microelectronics design, such as electrical performance improvement and reducing interconnect delay. While the power density of 3D ICs increases because of vertical integration, the available substrate area for heat removal does not change. Thermal modeling of 3D ICs is important for improving thermal and electrical performance. Experimental investigation on the thermal measurement of 3D ICs and determination of key physical parameters in 3D ICs thermal design are curtail. One such important parameter in thermal analysis is the interdie thermal resistance between adjacent die bonded together. This paper describes an experimental method to measure the value of interdie thermal resistance between two adjacent dies in a 3D IC. The effect of heating one die on the temperature of the other die in a two-die stack is measured over a short time period using high-speed data acquisition to negate the effect of boundary conditions. Numerical simulation is performed and based on a comparison between experimental data and the numerical model, the interdie thermal resistance between the two dies is determined. A theoretical model is also developed to estimate the value of the interdie thermal resistance. Results from this paper are expected to assist in thermal design and management of 3D ICs.
Thermal modeling and temperature prediction in 3D ICs are important for improving performance and reliability. A number of numerical and analytical models have been developed for thermal analysis of 3D ICs. However, there is a relative lack of experimental work to determine key physical parameters in 3D IC thermal design. One such important key parameter is the inter-die thermal resistance between adjacent die bonded together. This paper describes a novel experimental method to measure the value of inter-die thermal resistance between two die in a 3D IC. The effect of heating one die on the temperature of the other die in a two-die stack is measured over a short time period using high speed data acquisition to negate the effect of boundary conditions. Numerical simulation is performed and based on a comparison between experimental data and the numerical model, the inter-die thermal resistance between two die is determined. There is good agreement between experimental measurement and theoretically estimated value of the inter-die thermal resistance. Results from this paper are expected to assist in thermal design and management of 3D ICs.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.
hi@scite.ai
10624 S. Eastern Ave., Ste. A-614
Henderson, NV 89052, USA
Copyright © 2024 scite LLC. All rights reserved.
Made with 💙 for researchers
Part of the Research Solutions Family.