We report on an ab anisotropy of Jc parallel b/Jc parallel a approximately/= 1.8 IcRn parallelb/IcRn parallel a approximately/= 1.2 and in ramp-edge junctions between untwinned YBa2Cu3O7 and s-wave Nb. For these junctions, the angle theta with the YBa2Cu3O7 crystal b axis is varied as a single parameter. The RnA(theta) dependence presents twofold symmetry. The minima in IcRn at theta approximately/= 50 degrees suggest a real s-wave subdominant component and negligible d(xy)-wave or imaginary s-wave admixtures. The IcRn(theta) dependence is well fitted by 83% dx2-y2-, 15% isotropic s-, and 2% anisotropic s-wave order parameter symmetry, consistent with deltab/deltaa approximately/= 1.5.
The correlation between the vicinal properties of SrTiO3 (001) substrates and the twinning in YBa2Cu3O7−x thin films grown by pulsed-laser deposition is studied using x-ray diffraction with reciprocal space mapping. The vicinal properties, i.e., angle and in-plane orientation, play a significant role in the anisotropic strain starting at the interface between substrate surface and film, and affect the twin behavior of YBa2Cu3O7−x. On substrates having an [110] in-plane orientation of the step edges, a completely preferred twin pair is observed if the vicinal angle is increased to 0.60°. Whereas on substrates having their step edges oriented along one of the crystallographic axis, the films exhibit a detwinning as the vicinal angle increases. For α=1.10° a maximum detwinned, i.e., monocrystalline film is obtained. At this angle, the diffusion length of YBa2Cu3O7−x during the growth matches the terrace length of SrTiO3. Up to this specific angle, the films are grown perpendicular to the optical instead of the crystallographic surface.
The influence of Sn doping in In2O3 thin films on conductance, transmission, and granular structure has been studied. By careful control of the pulsed-laser deposition parameters, films with high optical transmittance (>85%) and low resistivity (ρ=4.1×10−4Ωcm) are grown at room temperature on polyethylene terephthalate substrates. The films ablated from Sn-doped targets are more resistive compared to samples of pure In2O3. Due to increased scattering, the charge carrier mobility in Sn-doped films is lower compared to the undoped samples. A relation between the structural properties and the amount of Sn doping is observed. The electrical properties of films with different compositions are influenced by a different size and formation of grains during growth.
A length extensional mode lead zirconate titanate (PZT)-on-Si resonator is presented using 50 Ω termination with high-stopband rejection exploiting feed-through cancellation. A 250-nm-thick (100)-dominant oriented PZT thin-film deposited on top of 3 μm Si using pulsed laser deposition has been used. The resonator is presented with the length of 40 μm (half-wavelength), which corresponds to a resonance frequency of about 83 MHz. The effect of feed-through cancellation has been studied to obtain high-stopband rejection using bottom electrode patterning in the presence of a specific grounding resistance. Using this technique, the stopband rejection can be improved by more than 20 dB.
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