The electronic reconstruction at the interface between two insulating oxides can

In recent years, well-defined and nearly perfect single crystal surfaces of oxide perovskites have become increasingly important. A single terminated surface is a prerequisite for reproducible thin film growth and fundamental growth studies. In this work, atomic and lateral force microscopy have been used to display different terminations of SrTiO3. We observe hydroxylation of the topmost SrO layer after immersion of SrTiO3 in water, which is used to enhance the etch-selectivity of SrO relative to TiO2 in a buffered HF solution. We reproducibly obtain perfect and single terminated surfaces, irrespective of the initial state of polished surfaces and the pH value of the HF solution. This approach to the problem might be used for a variety of multi-component oxide single crystals. True two-dimensional reflection high-energy electron diffraction intensity oscillations are observed during homo epitaxial growth using pulsed laser deposition on these surfaces.

As discovered by Ohtomo and Hwang, a large sheet charge density with high mobility exists at the interface between SrTiO 3 and LaAlO 3 . Based on transport, spectroscopic, and oxygen-annealing experiments, we conclude that extrinsic defects in the form of oxygen vacancies introduced by the pulsed laser deposition process used by all researchers to date to make these samples is the source of the large carrier densities. Annealing experiments show a limiting carrier density. We also present a model that explains the high mobility based on carrier redistribution due to an increased dielectric constant.

Strain engineering enables modification of the properties of thin films using the stress from the substrates on which they are grown. Strain may be relaxed, however, and this can also modify the properties thanks to the coupling between strain gradient and polarization known as flexoelectricity. Here we have studied the strain distribution inside epitaxial films of the archetypal ferroelectric PbTiO(3), where the mismatch with the substrate is relaxed through the formation of domains (twins). Synchrotron X-ray diffraction and high-resolution scanning transmission electron microscopy reveal an intricate strain distribution, with gradients in both the vertical and, unexpectedly, the horizontal direction. These gradients generate a horizontal flexoelectricity that forces the spontaneous polarization to rotate away from the normal. Polar rotations are a characteristic of compositionally engineered morphotropic phase boundary ferroelectrics with high piezoelectricity; flexoelectricity provides an alternative route for generating such rotations in standard ferroelectrics using purely physical means.

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A large variety of transport properties have been observed at the interface between the insulating oxides SrTiO3 and LaAlO3 such as insulation, 2D interface metallicity, 3D bulk metallicity, magnetic scattering, and superconductivity. The relation between the structure and the properties of the SrTiO3/LaAlO3 interface can be explained in a meaningful way by taking into account the relative contribution of three structural aspects: oxygen vacancies, structural deformations (including cation disorder), and electronic interface reconstruction. The emerging phase diagram is much richer than for related bulk oxides due to the occurrence of interface electronic reconstruction. The observation of this interface phenomenon is a display of recent advances in thin film deposition and characterization techniques, and provides an extension to the range of exceptional electronic properties of complex oxides.

We present a study of the lattice response to the compressive and tensile biaxial stress in

The structure, oxygen stoichiometry, and chemical and thermal expansion of Ba 0.5 Sr 0.5 Co 0.8 Fe 0.2 O 3-δ (BSCF) between 873 and 1173 K and oxygen partial pressures of 1 × 10 -3 to 1 atm were determined by in situ neutron diffraction. BSCF has a cubic perovskite structure, space group Pm3 hm, across the whole T-pO 2 region investigated. The material is highly oxygen deficient with a maximum oxygen stoichiometry (3δ) of 2.339(12) at 873 K and a pO 2 of 1 atm and a minimum of 2.192(15) at 1173 K and a pO 2 of 10 -3 atm. Good agreement is obtained between oxygen stoichiometry data determined by neutron diffraction and thermogravimetry. In the range covered by the experiments, the thermal and chemical expansion coefficients are 19.0(5)-20.8(6) × 10 -6 K -1 and 0.016(2)-0.026(4), respectively.