2007
DOI: 10.1038/nmat1931
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Magnetic effects at the interface between non-magnetic oxides

Abstract: The electronic reconstruction at the interface between two insulating oxides can

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Cited by 1,649 publications
(1,779 citation statements)
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References 30 publications
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“…However, remotely changing electronic states far from the adsorbed layer is possible, if these states are electrostatically coupled to the surface. Here we show that the surface adsorption of common solvents such as acetone, ethanol, and water can induce a large change in the conductivity at the buried interface between SrTiO 3 substrates and LaAlO 3 thin films [3][4][5][6][7][8] , and an adsorbate induced insulator to metal transition was observed when the thickness of LaAlO 3 , d LAO , is around 3 unit cells (uc). This phenomenon is observed only for polar solvents.…”
mentioning
confidence: 86%
“…However, remotely changing electronic states far from the adsorbed layer is possible, if these states are electrostatically coupled to the surface. Here we show that the surface adsorption of common solvents such as acetone, ethanol, and water can induce a large change in the conductivity at the buried interface between SrTiO 3 substrates and LaAlO 3 thin films [3][4][5][6][7][8] , and an adsorbate induced insulator to metal transition was observed when the thickness of LaAlO 3 , d LAO , is around 3 unit cells (uc). This phenomenon is observed only for polar solvents.…”
mentioning
confidence: 86%
“…Examples include vortices in high temperature superconductors 1 , ferromagnetism at the interface between oxide band insulators 2 , and skyrmion phases in helimagnets 3,4 . Many experimental tools, including real space imaging techniques such as magnetic force microscopy (MFM) 5 , scanning superconducting quantum interference devices (SQUIDs) 6 and Lorentz transmission electron microscopy (TEM) 7 , and reciprocal space techniques including neutron scattering 8 have been successfully utilized to study magnetism in these systems.…”
mentioning
confidence: 99%
“…LAO/STO is well known for showing interface conductivity between two otherwise insulating materials716181920212223. However, if the STO substrate is reduced during low oxygen pressure deposition a strong contribution of the bulk conduction of the STO is measurable67, while a deposition at high oxygen pressures can result in an undesirably high resistance1820. One of the central challenges of PLD processes is thus, the need of a low oxygen pressure to grow certain complex oxides and the accompanied undesired reduction of the thin film, the substrate or both.…”
mentioning
confidence: 99%
“…Numerous examples can be found in literature for the reduction of STO substrates during pulsed laser depositions for physical oxygen pressures below 10 −5  mbar6711161718202122. This opposes the results of chemically controlled reducing atmosphere annealing experiments (H 2 /Ar/O 2 mixtures), for which the sample is, in opposite to vacuum annealing, under a physical pressure of 1 bar.…”
mentioning
confidence: 99%