Magnetostrictive materials exhibit a resonant frequency under an alternating magnetic field. Amorphous iron-boron film is well known as a magnetostrictive material. In order to obtain an amorphous phase of FeB thin film by electrochemical deposition, solution deposition parameters -such as current density, solution concentration, and ratio of precursors -was investigated. The amorphous FeB thin films were deposited at higher current densities and concentration of the solution. The relationship between phase formation and kinetic effect was also studied. Magnetic behavior of these films was examined by measuring the resonant frequency.

In this paper, the processing conditions of the amorphous silicon film growth were investigated the effect in forming the HSG-Si on the surface of the storage electrode. As a result, when the amorphous silicon film phosphorus concentration is greater than 5.5 ± 0.1E19 atoms / ㎤, HSG-Si is not formed correctly and showed the concentration dependency of HSG formation. Also, the optimum condition of the phosphorus concentration for amorphous silicon and HSG thickness are 4.5E19 atoms/㎤ and 450Å, respectively, because of the HSG thickness over the 500Å create to bit failure according to a short of the electrodes and the electrode.

Fe-B alloy films were fabricated by an electrochemical deposition method. The effects of deposition parameters including current density, solution concentration, and ratio of precursors on crystallinity and magnetostrictivity were investigated. Amorphous Fe-B alloy films were obtained in the conditions of effective boron incorporation and high nucleation rate by increasing current density, solution concentration, and ratio of iron precursor. The results indicate that amorphous phase formation is related to deposition kinetics and chemical affinity between iron and boron precursors. The magnetostrictive characterization of the deposited amorphous Fe-B alloys demonstrated a potential biosensor platform of the films.