No abstract

Efficiencies measure greater than 2 lumens/watt in a PDP structure with auxiliary control electrodes creating lateral volume discharges. These sustain discharges can be more efficient than conventional surface discharges because they have a "positive like" column which occurs deeper in the PDP cell and is longer in space and time.

A number of oxygen vacancies were found in the MgO film when a nanoscale-metal embedded MgO film (MgO/nanoscale metal film/MgO) was exposed to a pulsed KrF excimer laser. This was due to the interfacial reaction between embedding nanoscale metal and MgO film. In a case of Nb embedding metal, the Nb 2 O 5 crystallites were evidenced to proceed the reaction at the MgO/Nb interface; 5MgO + 2Nb f Nb 2 O 5 + 5Mg + 5V O 3 3 . The oxygen vacancies formed the F centers in the MgO bandgap, resulting in high cathodoluminescence intensity at the 431 and 526 nm region, corresponding to F + and F centers. The F centers in MgO played a role in increasing secondary electron emission coefficient (γ). As several kinds of nanoscale metals for creating F centers (Cr, Ti, V, In, Ta, and Nb) were embedded into MgO film, the γ values were found to be inversely linear with the ΔG f for the formation of metal oxides. The Nb embedded MgO film showed the highest γ value of ∼0.232 compared with normal MgO film (0.034).

Degradation mechanism of secondary electron emission (SEE) properties in plasma-exposed MgO films was studied using three types of plasma ion; He þ , Ne þ , and Ar þ . As the mass of impinging ions increased from He þ to Ar þ , the SEE coefficient () of MgO decreased from 0.0227 to 0.0175. Synchrotron radiation photoemission spectroscopy revealed that the Mg-to-O ratio significantly decreased from 1.00 to 0.79 in He plasma, to 0.73 in Ne plasma, and to 0.66 in Ar plasma. This was due to the preferential sputtering of Mg atoms by the highmass ions, leading to the production of Mg vacancies (V centers) near the surface of MgO and the decrease in .

We investigated the effect of doping to MgO protection layer on secondary electron emission properties. The firing voltage of ZnO doped (1 at. %) MgO is lower by 40V than that of non‐doped MgO at 4.2 Torr cm. Li2O (1 at. %) and BaO (1 at. %) doped MgO also shows lower firing voltage than non‐doped MgO about 20V.

The static and dynamic characteristics of Triangular Color pixel Arrangement TCA structure Alternating Current Plasma Display Panel AC PDP were observed with the variation of the discharge gas. We observed the characteristic changes of operation voltages, brightness and luminous efficacy with required addressing time for TCA structure AC PDP. And the performance was verified in a 42‐in. diagonal WXGA PDP of 1024×768 format.

No abstract

A new PDP cell structure called CSP (Charge Storage Pad) improves the luminous efficiency by 1.6 times and prevents cross talk between adjacent cells. The CSP, which is a conducting material, is inserted between the dielectric layer and the MgO film in the front plate. This CSP produces a longer time-averaged discharge path to get a high luminous efficiency and confines the discharge to prevent cross talk