The heterogeneous integration of devices from multiple material platforms onto a single chip is demonstrated using a transfer-printing (TP) technique. Serial printing of devices in spatially dense arrangements requires that subsequent processes do not disturb previously printed components, even in the case where the print head is in contact with those devices. In this manuscript we show the deterministic integration of components within a footprint of the order of the device size, including AlGaAs, diamond and GaN waveguide resonators integrated onto a single chip. Serial integration of semiconductor nanowire (NW) using GaAs/AlGaAs and InP lasers is also demonstrated with device to device spacing in the 1 μm range.
Transfer printing is becoming widely adopted as a back-end process for the hybrid integration of photonic and electronic devices. Integration of membrane components, with micrometer-scale footprints and sub-micron waveguide dimensions, imposes strict performance requirements on the process. In this review, we present an overview of transfer printing for integrated photonics applications, covering materials and fabrication process considerations, methods for efficient optical coupling, and high-accuracy inter-layer alignment. We present state-of-the-art integration demonstrations covering optical sources and detectors, quantum emitters, sensors, and opto-mechanical devices. Finally, we look toward future developments in the technology that will be required for dense multi-materials integration at wafer scales.
We present a high performance silicon nitride photonic integrated circuit platform operating at visible wavelengths, accessible through the commercial foundry, LIGENTEC. Propagation losses were measured across the visible spectrum from 450 nm to 850 nm. For wavelengths above 630 nm, losses were <1 dB/cm in TE and <0.5 dB/cm in TM. Additionally, sets of single mode waveguide-coupled ring resonators across three separate chips were tested and analysed. A peak intrinsic Q factor of 3.69 × 106 was measured for a single resonance at ∼635.3 nm, with an average value of 2.28 × 106 recorded over 10 peaks in a 3 nm tuning range. Analyses of the loss and coupling, as functions of bus-ring coupling gap and waveguide width, are also presented. High confinement, low loss devices realised on the chip-scale in a wide-bandgap material like silicon nitride are increasingly important for the next generation of integrated optical devices operating at visible wavelengths.
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