Stress generated by thermal annealing of thick parylene-n (PA-n) films (4–7 μm) has been studied. We examined the behavior of stress for as-deposited films and rapidly thermally annealed films. The annealing was done in vacuum and the stress measured after the anneal. In another experiment the stress was also studied in-situ with thermal annealing. The as-deposited films are under compressive stress of about 18 MPa. When the backside film was removed by plasma etching, the stress changed from compressive to tensile. As the films are annealed, the stress decreases and then becomes tensile, peaking at about 60 MPa. The film crystallinity and stress are correlated for PA-n films. It was observed that stress is reduced during the crystal phase transformations at around 220°C and 270°C. This property can be used to relieve stress in multilevel structures. It was also found that slower heating and cooling led to lowered stress. The stress has been compared to reported values from other sources. Stress in PA-c (chlorinated) and co-polymerized PA-n and -e (esterfied) films has also been reported.
This paper explores the need for excqtionally large amounts of bypass capacitance required by WSI and WSW/MCM based systems which are operating at state of the art in switching speeds. This capacitance quired may become amiderably larger than can be obtained by simply making tiin oxide metal plate capacitors unless alternate design styles are adopted for the circuits employed which exhibit less switching noise. ' h e paper explores some of the criteria for picking the value of the bypass capacitance, and examines techniques for introducing high dielectric constant materials into the semiconductor pmcesing of the substrates. In parhcular, the paper explores the possibility of depositing thin layers of amorphous Ban03 at low temp" to form a reliable, pin-hole fm. dielectric for bypass capacitance by use of ionized cluster beam techniques. Deposition of the amorphous mataial on both metal and semiconductor substates is possible.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.