A monolithic two-section InGaAs/GaAs double quantum wells (DQWs) mode-locked laser (MLL) emitting at 1.06 µm is demonstrated. Stable mode locking operation is achieved up to 80 • C. The fundamental repetition rate is at ∼9.51 GHz with a signal-to-noise ratio (SNR) of more than 55 dB, and up to the fourth harmonic at ∼38.04 GHz is observed. The characteristic temperature (T 0 ) of the laser and the influences of absorber bias voltage on T 0 have been systematically investigated. From our findings, T 0 shows a two-segment feature, and is slightly affected by the absorber bias voltage for photon saturation.INDEX TERMS Semiconductor lasers, quantum well lasers, quantum wells, laser modes.
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