Stable Mode-Locked Operation With High Temperature Characteristics of a Two-Section InGaAs/GaAs Double Quantum Wells Laser

Abstract

A monolithic two-section InGaAs/GaAs double quantum wells (DQWs) mode-locked laser (MLL) emitting at 1.06 µm is demonstrated. Stable mode locking operation is achieved up to 80 • C. The fundamental repetition rate is at ∼9.51 GHz with a signal-to-noise ratio (SNR) of more than 55 dB, and up to the fourth harmonic at ∼38.04 GHz is observed. The characteristic temperature (T 0 ) of the laser and the influences of absorber bias voltage on T 0 have been systematically investigated. From our findings, T 0 shows a two-segment feature, and is slightly affected by the absorber bias voltage for photon saturation.INDEX TERMS Semiconductor lasers, quantum well lasers, quantum wells, laser modes.

Simulation and analysis of a Single Mode Indium Gallium Arsenide Phosphide Vertical Cavity Surface Emitting Laser for Optical Communication

“…With good choice of the well width, energy of the emitted photon can be justified enabling lasing at different wavelengths using same material. A single QW is similar in design with a DH except for a narrow gap close to de Broglie's wavelength [27]. Only certain discrete energy states are available in a well (allowed energy levels of the system).…”