The room-temperature epitaxial growth of CeO2 films on Si(111) substrates was examined in situ by combined use of a coaxial impact-collision ion scattering spectroscopy (CAICISS) and the laser molecular beam epitaxy (laser MBE). It was found that the crystal quality of CeO2 ultrathin films (∼3 nm thick) as-grown in UHV (∼10−9 Torr) could be improved remarkably by a few minutes of O2 gas exposure (∼10−5 Torr) at room temperature. A three-fold symmetry in the Ce signal intensity of azimuth rotational CAICISS spectra, which exhibited the type-B epitaxial growth ([1̄10]CeO2‖[11̄0]Si), was observed for the films thicker than about 1 nm.
We have examined the novel heteroepitaxy of magnetic oxide thin films on ultra-smooth sapphire substrates by laser MBE for fabrication of low-dimensional structures. Employing the atomically controlled substrate surfaces with atomic steps and terraces, we demonstrate the deposition of magnetic oxide nanowires (~0.5 nm high and ~20 nm wide) and nanodots of (Mn, Zn) ferrite, Fe3O4 and NiO.
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