Nano-Scale Heteroepitaxy Control of Magnetic Oxide Thin Films on Ultra-Smooth Sapphire Substrates

Takakura, Masahiro; Miyahara, Takafumi; Tashiro, J.; Sasaki, Atsushi; Furusawa, M.; Yoshimoto, Mamoru

doi:10.1557/proc-648-p6.5

Cited by 5 publications

(6 citation statements)

References 15 publications

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“…There have been studies on the fabrication of magnetic and semiconductor nanowires, nanodots, and nanogrooves of oxides such as (Mn 0.55 Zn 0.35 Fe 0.10 )Fe 2 O 4 , Fe 3 O 4 , and NiO [5][6][7][8][9][10][11] via self-assembly phenomena along the atomic steps on the vicinal surface of stepped sapphire (α-Al 2 O 3 single crystal) substrates [12]. The sapphire substrate has atomically flat terraces with 0.2-nm-high atomic steps, which are formed by atom migration to reduce the surface energy during thermal annealing.…”

Section: Introductionmentioning

confidence: 99%

Atomic-Scale Pattern Control of Surfaces on Functional Oxide Thin Films and Glass Plates

Akita

Sugimoto

Yoshimoto

et al. 2010

e-J. Surf. Sci. Nanotech.

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Atomic-scale surface modification of silicate glass plates was demonstrated by applying a thermal nanoimprint technique using self-assembled oxide nanopattern molds, which were atomically stepped sapphires (α-Al2O3 single crystal) (step height of about 0.2 nm and terrace width of about 100 nm) or originally developed multiple nanogrooved NiO thin films (groove depth, width, and separation of about 25, 70, and 150 nm, respectively). Atomically stepped or nanowire patterns were successfully formed on the nanoimprinted glass surface. The former surface-modified glass has atomic steps (step height of about 0.2 nm) and atomically smooth terraces (RMS roughness of about 0.10 nm). The stepped pattern on the nanoimprinted glass (glass transition temperature of 521 • C) disappeared after annealing at temperatures above 600 • C. In addition, glass nanoimprint on the atomically stepped glass plate using graphite molds (highly oriented pyrolytic graphite (HOPG)) was examined preliminarily.

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Section: Introductionmentioning

confidence: 99%

Atomic-Scale Pattern Control of Surfaces on Functional Oxide Thin Films and Glass Plates

Akita

Sugimoto

Yoshimoto

et al. 2010

e-J. Surf. Sci. Nanotech.

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“…3. The ultrasmooth sapphire substrates with straight atomic steps were verified to be useful in the step-decoration epitaxy resulting in oxide nanowires 29) and diamond heteroepitaxy 4) and also suitable as the nanoscale sample stage in atomic force microscopy (AFM) observation. 30) Here we present a novel method for micropatterning of the sapphire substrate surface at RT which utilizes the selective homoepitaxial growth induced by the electron-beam irradiation during laser MBE film growth at RT.…”

Section: Epitaxial Ito Thin Films With Ceo 2 Buffer Layer and Rt-devementioning

confidence: 99%

Room-temperature synthesis of epitaxial oxide thin films for development of unequilibrium structure and novel electronic functionalization

Yoshimoto

Yamauchi

Shiojiri

et al. 2013

J. Ceram. Soc. Japan

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Epitaxial growth of oxide films at lower temperatures is favored to obtain sharp interfaces and flat surfaces which are of advantage to construct high-quality electronic devices, and also is expected to result in novel development of unequilibrium structure and new electronic functionalization. Pulsed laser deposition (PLD) technique using laser ablation of a solid target is known to reduce the temperature drastically for epitaxial growth because of the highly energetic film precursors ablated from the target. In this article we briefly review the main achievements of our research group on room-temperature (RT, 20°C) synthesis of epitaxial oxide thin films by way of laser MBE process, i.e. PLD in ultrahigh vacuum. RT-epitaxial film growth by laser MBE and its electronic application were presented for some functional oxide thin films such as ZnO, Sn-doped In 2 O 3 (ITO), sapphire (¡-Al 2 O 3 ), (Li,Ni)O, or (Mg,Ni)O, and also magnetic functionalization via selective post-depositional reduction of complex oxide films was demonstrated.

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“…Previously, we have reported the fabrication of magnetic and semiconducting nanowires or nanodots of oxides such as (Mn 0.55 Zn 0.35 Fe 0.10 ) Fe 2 O 4 [11][12][13], Fe 3 O 4 [11][12][13], and NiO [12][13][14][15][16] by the self-assembled decoration of atomic step edges on sapphire (single-crystal α-Al 2 O 3 ) substrates [17] using the pulsed laser deposition (PLD) method. In the PLD thin-film process, a pulsed laser beam impinges on a solid target, and then highly excited film precursors fly from the target to the substrate surface at supersonic speed (∼10 4 m s −1 ) to deposit the film [18].…”

Section: Introductionmentioning

confidence: 99%

Formation of a nanogroove-striped NiO surface using atomic steps

Akiba¹,

Matsuda²,

Isa³

et al. 2006

Nanotechnology

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A nanogroove-striped pattern was formed on a NiO film surface. The periodic nanopattern was successfully obtained over the entire surface via high-temperature annealing of the epitaxial NiO thin film, which was grown on an atomically stepped sapphire substrate at low temperature. The depth, width and interval of straight nanogrooves were about 3 nm, 35 nm and about 100 nm, respectively. The periodicity of the stripe agrees well with that of the atomic steps of the substrate.

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Nano-Scale Heteroepitaxy Control of Magnetic Oxide Thin Films on Ultra-Smooth Sapphire Substrates

Cited by 5 publications

References 15 publications

Atomic-Scale Pattern Control of Surfaces on Functional Oxide Thin Films and Glass Plates

Atomic-Scale Pattern Control of Surfaces on Functional Oxide Thin Films and Glass Plates

Room-temperature synthesis of epitaxial oxide thin films for development of unequilibrium structure and novel electronic functionalization

Formation of a nanogroove-striped NiO surface using atomic steps

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