MEMS-based oscillators are an emerging class of highly miniaturized, batch manufacturable timing devices that can rival the electrical performance of well-established quartz-based oscillators. In this review, a description is given of the key properties of a MEMS resonator that determine the overall performance of a MEMS oscillator. Piezoelectric, capacitive and active resonator transduction methods are compared and their impact on oscillator noise and power dissipation is explained. An overview is given of the performance of MEMS resonators and MEMS-based oscillators that have been demonstrated to date. Mechanisms that affect the frequency stability of the resonator, such as temperature-induced frequency drift, are explained and an overview is given of methods that have been demonstrated to improve the frequency stability. The aforementioned performance indicators of MEMS-based oscillators are benchmarked against established quartz and CMOS technologies.

Heat engines provide most of our mechanical power and are essential for transportation on macroscopic scale. However, although significant progress has been made in the miniaturization of electrostatic engines, it has proven difficult to reduce the size of liquid or gas driven heat engines below 10^7 um^3. Here we demonstrate that a crystalline silicon structure operates as a cyclic piezoresistive heat engine when it is driven by a sufficiently high DC current. A 0.34 um^3 engine beam draws heat from the DC current using the piezoresistive effect and converts it into mechanical work by expansion and contraction at different temperatures. This mechanical power drives a silicon resonator of 1.1x10^3 um^3 into sustained oscillation. Even below the oscillation threshold the engine beam continues to amplify the resonator's Brownian motion. When its thermodynamic cycle is inverted, the structure is shown to reduce these thermal fluctuations, therefore operating as a refrigerator.Comment: Updated version after publication to make it almost identical to the Nature Physics article. During the review process the preprint v1 was merged with part of the results from arXiv:0904.3748 (please check this manuscript for more details on the measurements and simulations

We report on measurements of the time dependent capacitance of a RF MEMS shunt switch. A high time resolution detection setup is used to determine switching time and motion of the device. From the equation of motion the damping force is extracted. The measured damping force is found to be approximately proportional to the speed over the gap distance to the third power (F D ∝ v/z 3 ), in good agreement with squeeze film damping theory. Measurements at low pressure show underdamped harmonic oscillations in the opening motion and contact bounce effects in the closing motion. Effects of dielectric charging on the C-V curves are discussed. Experimental results are compared with electromechanical and damping simulations.

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