Scalable 1.1 GHz fundamental mode piezo-resistive silicon MEMS resonator

Beek, J.T.M. van; Verheijden, G. J. A. M.; Koops, G. E. J.; Phan, K.L.; Avoort, C. van der; Wingerden, J. van; Badaroglu, D.E.; Bontemps, J.J.M.

doi:10.1109/iedm.2007.4418960

Cited by 40 publications

(34 citation statements)

References 7 publications

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“…Three-port scalar-mixer measurements are often required. To overcome this obstacle, piezoresistive sensing of a capacitively actuated resonator is implemented [33]. There are several benefits to piezoresistive detection.…”

Section: Capacitive Drive and Piezoresistive Sensementioning

confidence: 99%

The Resonant Body Transistor

2010

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Cornell University 2009With quality factors (Q) often exceeding 10,000, vibrating micromechanical resonators have emerged as leading candidates for on-chip versions of high-Q resonators used in wireless communications systems, sensor networks, and clocking sources in microprocessors. However, extending the frequency of MEMS resonators generally entails scaling of resonator dimensions leading to increased motional impedance. In this dissertation, I introduce a new transduction mechanism using dielectric materials to improve performance and increase frequency of silicon-based RF acoustic resonators.Traditionally, electrostatically transduced mechanical resonators have used air-gap capacitors for driving and sensing vibrations in the structure. To increase transduction efficiency, facilitate fabrication, and enable GHz frequencies of operation, it is desirable to replace air-gap transducers with dielectric films.In my doctoral work, I designed, fabricated, and demonstrated dielectrically transduced silicon bulk-mode resonators up to 6.2 GHz, marking the highest acoustic frequency measured in silicon to date. The concept of internal dielectric transduction is introduced, in which dielectric transducers are incorporated directly into the resonator body. With dielectric films positioned at points of maximum strain in the resonator, this transduction improves in efficiency with increasing frequency, enabling resonator scaling to previously unattainable frequencies. Using internal dielectric transduction, longitudinal-mode resonators exhibited the highest frequency-quality factor ( f Q) product in silicon to date

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Section: Capacitive Drive and Piezoresistive Sensementioning

confidence: 99%

The Resonant Body Transistor

2010

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“…A very promising new development is in the field of integrated resonators [17] [18]. Highquality mechanical resonators are being proposed for application as frequency reference signals (as a potential replacement of quartz oscillators), and within analog filters.…”

Section: Novel Electronic Componentsmentioning

confidence: 99%

Gridpix - Chip Post-processing

Schmitz¹

2010

Proceedings of VERTEX 2009 (18th Workshop) — PoS(VERTEX 2009)

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InGrid, the technology used to make CMOS-integrated high voltage electrodes for micropattern gaseous detectors is reviewed in this paper. It is presented in the broader context of CMOS wafer post-processing. This processing platform is briefly described, and recent highlights of this manufacturing approach are brought forward. The InGrid technology facilitates research into radiation imaging detectors with fully integrated electronics. VERTEX 2009 (18th workshop)

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“…The resonator frequency response is also measured through the variation in the electrical resistance of the vibrating structure due to the piezoresistive effect [3]. This method has been previously shown to be a promising alternative for increasing the amplitude of the motional signal relative to the capacitive feedthrough for particular topologies of bulk mode resonators [1]. The open-loop transmission measurements for the resonator are characterized utilizing the setup schematic shown in Fig.…”

Section: Methodsmentioning

confidence: 99%

“…However, flexural mode induced parasitic mechanical resonances can lead to energy loss from the primary resonant mode and limit device performance. Furthermore, capacitively actuated and piezoresistively sensed silicon MEMS resonators have been presented as a means for scaling to high frequencies with a 1.1 GHz fundamental mode silicon MEMS resonator demonstrated in a SOI process [1]. In this case, the resonator topology was modified to accommodate piezoresistive transduction also resulting in the coupling to parasitic mechanical resonances.…”

Section: Introductionmentioning

confidence: 99%