Accurate values of the refractive index of n-type InP samples have been measured at two wavelengths, n = 0.633 μm and 1.15 μm, using a near-Brewster-angle reflectivity technique. For highly doped samples (carrier concentration ≳1018 cm−3) a relationship between carrier density and refractive index has been observed which can be explained in terms of conduction band filling.
The index of refraction dispersion of InP has been measured by a normal incidence reflection method. The index of refraction is proportional to the reflected power with a small correction necessary for absorption. Spectra are reported for one p-type and several n-type crystals, and are fitted with single-oscillator Sellmeier curves below the band-gap energy.
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