Abstract:Accurate values of the refractive index of n-type InP samples have been measured at two wavelengths, n = 0.633 μm and 1.15 μm, using a near-Brewster-angle reflectivity technique. For highly doped samples (carrier concentration ≳1018 cm−3) a relationship between carrier density and refractive index has been observed which can be explained in terms of conduction band filling.
“…A simple comparison of our results with those previously published, both experimental [5][6][7] or calculated, 8 show a general agreement. The overall tendency for a rapid decrease of n as soon as doping level exceeds 10 18 cm Ϫ3 can be clearly evidenced from Fig.…”
Section: 2supporting
confidence: 69%
“…Evidently, such accuracy necessitates a thorough knowledge of free-carrier induced change in refractive index due for instance to voluntary impurity doping. Unfortunately, the few available experimental data [5][6][7] show marked discrepancies. One frequently resorted in a theoretical model 8 to evaluate doping influence.…”
Accurate measurements of the InP refractive index as a function of free-carrier doping are reported at 1.3 and 1.5 m, the two strategic wavelengths for optical communications. A total of 21 samples with different N-and P-doping levels have been measured using a novel and simplified grating-coupling technique. In contrast to the conventional method, this only involves the use of a directly etched diffraction grating on the sample surface, thereby avoiding the necessity of a specific guiding layer. The measured index, in agreement with earlier predictions, decreases by more than 0.05 when the N doping is increased from below 10 15 to about 10 19 electrons per cubic centimeter. This effect, however, is much less pronounced with P doping than with N doping.
“…A simple comparison of our results with those previously published, both experimental [5][6][7] or calculated, 8 show a general agreement. The overall tendency for a rapid decrease of n as soon as doping level exceeds 10 18 cm Ϫ3 can be clearly evidenced from Fig.…”
Section: 2supporting
confidence: 69%
“…Evidently, such accuracy necessitates a thorough knowledge of free-carrier induced change in refractive index due for instance to voluntary impurity doping. Unfortunately, the few available experimental data [5][6][7] show marked discrepancies. One frequently resorted in a theoretical model 8 to evaluate doping influence.…”
Accurate measurements of the InP refractive index as a function of free-carrier doping are reported at 1.3 and 1.5 m, the two strategic wavelengths for optical communications. A total of 21 samples with different N-and P-doping levels have been measured using a novel and simplified grating-coupling technique. In contrast to the conventional method, this only involves the use of a directly etched diffraction grating on the sample surface, thereby avoiding the necessity of a specific guiding layer. The measured index, in agreement with earlier predictions, decreases by more than 0.05 when the N doping is increased from below 10 15 to about 10 19 electrons per cubic centimeter. This effect, however, is much less pronounced with P doping than with N doping.
“…The three principal carrier-induced effects are due to the plasma effect, the Burstein-Moss effect and band gap shrinkage [8,9]. These effects have been calculated for a variety of materials by Bennett et al [10] and experimentally determined for InP [11,12]. In Fig.…”
“…OXYDES. -Les épaisseurs moyennes des oxydes ont été mesurées par ellipsométrie sous une incidence de 700 à 6 328 A en supposant un indice de l'InP N = 3,548 -0,28 i [4,5]. Les résultats des calculs d'épaisseur et d'indice à partir des paramètres ellipsométriques A, t/1 ont été obtenus avec une valeur nulle pour l'indice d'extinction kox de l'oxyde, les valeurs non nulles de kox conduisant à des épaisseurs incompatibles avec les mesures électriques.…”
Des oxydes natifs minces ont été élaborés sur la face (100) de (n) InP dans un plasma RF oxygène et dans HNO3 vapeur à des températures allant jusqu'à 200°C. Les propriétés de ces oxydes ont été étudiées par ellipsométrie et par les méthodes électriques (capacité-tension à 1 MHz et courant-tension) sur les structures métaloxyde-InP. Les épaisseurs d'oxyde atteignent 260 Å avec un indice de réfraction voisin de 2 et une constante diélectrique variant de 4 à 8.Abstract. -Thin native oxides have been grown on (100) (n) InP in an O2 RF plasma and in HNO3 gas at different temperatures up to 200°C. Oxides properties have been studied by ellipsometry and by electrical characterization (capacitance-voltage at 1 MHz and current-voltage) of the metal-oxide-InP structures. Oxide thicknesses get to 260 Å with a refractive index near 2 and a dielectric constant varying from 4 to 8.
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