Plasma scaling up can be achieved by distributing elementary microwave plasma sources over two or tri-dimensional networks. This concept is applied to a planar reactor comprising 4 × 3 microwave plasma sources distributed according to a square lattice matrix configuration. In each elementary plasma source, the plasma is produced at the end of a coaxial applicator implemented perpendicularly to the planar source. An argon plasma can be sustained in the medium pressure range from 7.5 to 750 Pa. The sheet of plasma thus obtained becomes uniform at a distance from the source plane of 15 mm, i.e. less than half the 40 mm lattice mesh. Using a cylindrical Langmuir probe, plasma density and electron temperature have been investigated as functions of pressure and microwave power. Results show that the plasma can reach densities between 10 12 and 10 13 cm −3 with a uniformity better than ±3.5%.

et al.. Plasma-based ion implantation : a valuable technology for the elaboration of innovative materials and nano-structured thin films. 12th Abstract. Plasma-based ion implantation (PBII), invented in 1987, can now be considered as a mature technology for thin film modification. After a short recall of the principle and physics of PBII, its advantages and disadvantages, as compared to conventional ion beam implantation, are listed and commented. The elaboration of thin films or the modification of their functional properties by PBII are now currently achieved in many application fields, such as microelectronics (plasma doping / PLAD), biomaterials (surgical implants, bio-and bloodcompatible materials), plastics (grafting, surface adhesion), metallurgy (hard coatings, tribology), to name a few. The major interest of PBII processing lies, on one hand, in its flexibility in terms of ion implantation energy (from zero to 100 keV), of operating conditions (plasma density, collisional or non-collisional ion sheath), and, on the other hand, in the possibility to easily transfer processes from the laboratory to industry. The possibility to modify the composition and the physical nature of the films, or to change drastically their physical properties over several orders of magnitude makes this technology very attractive for the elaboration of innovative materials, including metastable materials, and the realization of micro-or nanostructures. A review of the state-of-the-art in these domains is presented and illustrated through a few selected examples The perspectives opened by PBII processing, as well as its limitations, are discussed.