Strain relaxation in GaAs/ In 0.2 Ga 0.8 As/ GaAs structures is investigated by analyzing relaxation-induced traps. Strain relaxation is shown to cause carrier depletion by the induction of a 0.53 eV trap in the top GaAs layer, a 0.13 eV trap in the InGaAs layer, and a 0.33 eV trap in the neighboring lower GaAs layer. The 0.53 eV trap which exhibits a logarithmic function of transient capacitance is attributed to threading dislocations. The 0.33 eV trap exhibits an exponential transient capacitance, suggesting a GaAs point defect as its origin. Given its activation energy, it is assigned to the EL6 in GaAs, commonly considered to be As i-V Ga complexes. This trap and the 0.13 eV trap are regarded as the same, since their energy difference is comparable to the optically determined conduction-band offset. The spatial location of this trap correlates with that of misfit dislocations. Accordingly, the production of this trap is determined from the mechanism of strain relaxation. A likely mode of strain relaxation is deduced from the locations of these traps.
At present, many countries devote a lot of resources to develop "smart grid", including Taiwan and China. To establish a smart grid industry at the ground of the back-end management system, the most important subsystems are the smart meter, meter data management system, and energy information communication technology. This study mainly applied the industrial portfolio matrix composed with the industry life cycle and the industry value chain (industrial technology capability phase) to analyze the subsystem industries and its positions.Analysis results showed that the two sides have significant development in the smart meter subsystem industry, however, not in the other two, meter data management system and energy information communication technology subsystems. It proves that the two sides are still in the initial stage in the two subsystem industries.
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