Note that the bulk charge effect for short channel devices and the INTRODUCTION saturation electric field (Esat) effect in the linear region (Vd-2OmV) As MOSFET gate length scales down to nano scale regime, are neglected in the drain current model of Eq. (1). As~~~~~~~~~~~~~Fg MOFEshows thatt anle optiwne Rsd ofnscalet forour parasitic source/drain series resistance (RSd) becomes one of the Fig. 2 shows that an optimized Rt d of febt165Q*,um for our most critical parameters impacting device performance. Many devices is obtained by minimizing the offset between experimental studies have focused on developing an effective Rsd extraction data and model with several iterations. Fig. 3 shows the IDVG methodology. The "Channel-Resistance method" Li] provides a fitting results in the short channel region. If the final R5d value is simethodoleoway. the extractnRSd-Rhweve method" s no provdes a not correct, the drain current ratio of different LG is not correct simple way to extract Rsd; however, this method is no longer either. Once Rsd is uniquely determined, the gate length adequate as pocket implants are introduced into the nano-scale ependency of iliquely may the gate from MOSFET. In this case, pocket profiles overlap in the short channel dependency of mobility (vaeff(LG)) may also be obtained from region, causing higher effective bulk concentration and resulting in intrinsic drain current via Eq. (3). Fig. 4 shows that NMeff tends to a total resistance which does not scale linearly with channel gate degrade in the deep-submicron region for both N/PMOS due to length (LG) [2]. Another famous method called "Shift & Ratio" halo implants Fig. 5 shows that good agreement between the (S&R) also suffers the similar issue because of its basic model and experimental data for a wide range of LG can be assumption that mobility (uteff) does not change with LG [3]. obtainedafterconsideringthegatelengthdependencyofmobility. Actually, pocket implant degrades ,teff in short channel region id (ext) because of higher effective bulk concentration by the halo Id (int) = R (3) overlapping profile [4]. Therefore, the key point for extracting Rsd I -Id (ext) xVd in nano-scale MOSFETs is to take the impacts of LG dependency Fig. 6 provides the Rsd sensitivity with variations on different of ,ueff into account. In .thi wor l-e key parameters, where Rsd iS the most sensitive to LG but this canIn this work, a simplified BSIM-based model has bee be overcome by careful in-line measurement. It is also worth proposed to solve the above issues contributed by halo implants [5]. ntn httevraino tf a ob iie owti %iIn this new methodology, RSd and ,teff can be uniquely extracted in noting that the variation of i eff has to be limited to within ± 500 if ± nano-scale devices. Furthermore, the extracted LG dependency of 40o Rsd variation is the maximum tolerance level. From our ,teff may serve as a good indicator for monitoring the relationship previous extraction work, it is reasonable to pick up LG equal to between geometry and stress parameters. 80-120n...
Indium and nitrogen implant were used to form the NMOSFET retrograde channel and low-threshold thin-oxide devices respectively. These two impurities are implanted into the same MOSFET channel before gate oxidation for an advanced low cost DRAM technology. High dose of indium implant degrades the oxide integrity, and with the acceding of the nitrogen impurities, enhanced GOI (gate oxide integrity) degradation were observed such as inducing abnormal Fowler-Nordheim (F-N) leakages, increasing ratio of near zero BVd defects. These phenomena were verified in both our 200mm and 300mm baseline. Fluorine impurities can be used to heal the implantinduced damage and improve the reliability of the gate oxides.
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