Il-VI WORKSHOP
PurposeThe purpose of this Workshop is to bring together the universities and the industrial and governmental communities that work with II-VI materials which include HgCdTe and other IR materials, Il-VI semiconductor alloys used for x-ray and y-ray detectors, ZnSe-based Il-VI photonic materials, and II:VI photorefractive materials. The Workshop aims at advancing the understanding of the physics and chemistry of these materials.
Areas of InterestAreas covered include a broad range of disciplines: materials engineering, intrinsio?' and extrinsic defects including doping, surface sciences, manufacturing/processing, electrical, optical, and magneto-optical properties as well as interactions between them.
Workshop FormatTo provide more discussion time, the Workshop program will consist of about 50 papers.When appropriate, invited, encouraged, and contributed papers with a common theme will be grouped for presentation and then followed by an extensive discussion period. Scheduled morning and afternoon breaks as well as lunch, provided as part of the workshop fee, can also be used as additional discussion time. To further promote informal discussion and interaction, the first two days will conclude with a wine and: cheese break accompanied by table-top displays from commercial vendors displaying products and services of interest to the community.
Conventional and high-resolution transmission electron microscopy are used to characterize the initial stages of AlN thin-film growth. AlN films are deposited by molecular beam epitaxy onto annealed (0001) oriented α-Al2O3 (sapphire) substrates. During the initial stages of film growth (film thickness ∼25 nm) AlN forms islands of varying alignment with the Al2O3 substrate. Some of the AlN islands are well aligned with the [112̄0]AlN∥[101̄0] Al2O3 and (0001)AlN∥(0001)Al2O3, which matches closed-packed planes and directions. Other islands exhibit either an alignment of one set of planes, i.e., grains are aligned with the (11̄01)AlN∥(112̄0) Al2O3, or are misaligned with respect to the Al2O3 substrate. As the AlN film grows in thickness (film thickness ∼100 nm), the film becomes continuous, and the closed-packed planes and directions of the film and substrate are aligned for the majority of the film. Islands of AlN with an alignment other than this predominant orientation disturb the growth near the AlN/Al2O3 interface and create displacements along the [0001] AlN direction in overlying AlN grains. These misaligned AlN grains provide one source for the formation of planar defects in the epitaxial AlN films. The evolution of the AlN film microstructure and the reasons for the observed orientation relationships are discussed.
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