Plasma etching is a main stream technology in integrated circuit fabrication. The general trend towards fine linewidths and decreasing thickness of underlying layers (etch stops) results in an increasing dependence on highly controlled plasma etch processes. Such tight control requires in situ process monitoring, particularly, for determination of the etch endpoint. This paper reviews the various methods for endpoint detection. A novel application of interferometric principles for very precise etch endpoint determination in high density circuits is described. A comparison of several methods used simultaneously in a plasma planarization process is presented. The etch endpoint can also be determined by monitoring the pressure change in the chamber upon completion of the etch. An application of this method to dielectric etching is demonstrated.
X‐ray diffraction measurements were used to determine the equilibrium phases for Na2O·y(Al1‐xFex)2O3_m in air for values of x from 0.05 to 0.6 and values of y from 2.5 to 9. The β“ ‐alumina structure was the only single phase observed. At 1400°C, the β” single‐phase region extends for 3.5< y< 7.5 and 0.2< x< 0.55. Precision lattice parameters were determined as functions of x and y.
Thin films of nickel-chromium alloys (10% chromium) were produced by the radio-frequency (rf) sputtering technique. The Seebeck coefficient of these films was measured with a constant 10 °C differential up to 360 °C versus bulk Alumel wires. At higher sputtering power (400 w) with a water-cooled anode, the seebeck coefficient approached the bulk response to within 2-1/2%. At lower sputtering powers, oxygen was incorporated into the lower density films, causing a decrease in thermal emf. Depositions made at elevated anode temperatures also showed a degradation in thermal emf, probably due to increased film oxidation with temperature.
Proben der Zusammensetzung N320 ‐ y(Al1‐xFex)203‐m [x = 0.05 ‐ O.6;y = 2.5 ‐ 9; m ist durch den Anteil an Fe(II) gegeben] werden röntgenographisch untersucht.
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