Atomic-scale imaging has been achieved on β-SiC surfaces using scanning tunneling microscopy in air. SiC films were grown on Si (100) substrates by chemical vapor deposition using the carbonization reaction of the surface with C3H8, followed (for films thicker than 100 nm) by the reaction of C3H8 and SiH4. For a relatively thick SiC (∼6 μm) film, the average nearest-neighbor surface atomic spacing measured was 3.09 Å, which is very close to the nominal value of 3.08 Å. Several of the thinner (<100 nm) SiC films exhibited significantly larger atomic spacings, indicating the strong effect of the larger atomic spacing (nominally 3.84 Å) of the Si substrate.
Activation and deactivation in heavily boron-doped silicon using ultra-low-energy ion implantation Redistribution and electrical activation of ultralow energy implanted boron in silicon following laser annealing This article demonstrates the capabilities of a new noncontact optical technique for measuring active doping depth of shallow implants. Employing a 2 m spot size, it provides a fast, nondestructive measurement in dimensions approaching those of individual devices. The method can be used to map micron-and wafer-scale regions, and does not require an edge exclusion zone. Data are presented showing performance on layers varying in depth from 200 to 1200 Å using rapid thermal annealing activated low-energy B 11 implants. Center-to-edge diameter scans on 200 mm wafers are presented. In many cases these show edge effects in the outermost centimeter, indicating the importance of minimizing the edge exclusion zone. Measurements are validated through correlation to spreading resistance profiles, and show a depth resolution of better than 3 Å.
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