Atomic probe imaging of β-SiC thin films grown on (100) Si

Steckl, A. J.; Mogren, S.; Roth, M.; Li, J. P.

doi:10.1063/1.107282

Cited by 13 publications

(3 citation statements)

References 7 publications

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“…The development of a SiC technology that integrates thin films with Si substrates is an exciting challenge for heteroepitaxy due to the large mismatch in the lattice constant (20%) between cubic β-SiC and Si. Despite this high lattice mismatch with silicon, epitaxial β-SiC growth on Si(001) substrates has been conducted by several authors [1][2][3][4][5][6][7][8][9][10][11][12][13][14]. A step common to almost all techniques used in the growth of epitaxial SiC on Si is to bring the Si surface at temperatures higher than those used during the SiC growth into contact with gaseous hydrocarbons prior to the SiC growth.…”

Section: Introductionmentioning

confidence: 99%

Influence of substrate temperature on formation of an SiC buffer layer by reaction of Si(100) with silane-methane plasma

Bittencourt¹

2000

Semicond. Sci. Technol.

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A clean Si(100) surface was reacted at temperatures over the range 750-1050 • C with methane-silane-hydrogen plasma. The reaction products on the surface were investigated using x-ray photoelectron spectroscopy, reflection high-energy electron diffraction, infrared absorption spectroscopy and atomic force microscopy. The results indicate that using substrate temperatures higher than 800 • C the reaction products on the surface are epitaxial islands that have a β-silicon carbide crystalline structure. For lower temperatures a more planar layer with a loss in the crystalline quality was observed.

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Section: Introductionmentioning

confidence: 99%

Influence of substrate temperature on formation of an SiC buffer layer by reaction of Si(100) with silane-methane plasma

Bittencourt¹

2000

Semicond. Sci. Technol.

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“…Research in the synthesis of silicon carbide (SiC) films has increased over the past years [1][2][3][4][5][6][7][8][9][10][11][12][13][14] driven by its potential application in high-temperature electronic devices. Early attempts at realizing electronic devices from SiC were frustrated by the difficulty of achieving substrates of a single-crystal polytype with satisfactory electronic quality.…”

Section: Introductionmentioning

confidence: 99%

Formation of a SiC buffer layer by reaction of Si (100) with methane and hydrogen plasma

Bittencourt¹

1999

J. Phys. D: Appl. Phys.

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The reaction of Si (100) surfaces at T = 950 • C with radicals of methane obtained in a low-power-density glow discharge plasma, has been studied by combining in situ surface science techniques (x-ray photoemission spectroscopy and high electron energy diffraction) and ex situ analytical techniques (atomic force microscopy and infrared absorption). An analysis of C 1s and Si 2p core-level shifts combined with the examination of the valence-band curves showed that the obtained buffer layers were stoichiometric. For long carbonization times (>30 min) the formation of a carbon rich surface was observed. To understand the mechanism of hetero-epitaxial silicon carbide (SiC) buffer layer growth, the early stage of SiC nucleation was observed by atomic force microscopy and reflection high-energy electron diffraction. The results suggest that three-dimensional epitaxial islands nucleate at the earliest growth stage followed by a further Volmer-Weber growth until the formation of a carbon rich surface. The growth mechanism of the SiC buffer layer is discussed on the basis of a reported model.

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“…1.847Si,C,Si, 116 7. Si,C,Si,130.6 Si&, 2.122 Si&, 1.838 Si,C,Si, 87.3 4(Si2C2Si2) 11.9 Si,C, 2.207 C, H 1.126 HC,H 96.9 $(Si3C3Si3) 29.1 Si,C, 2.164 Si& 1.855 C,Si,C, 111.2 &Si,C,Si,) 0 hedral value and the former H-C-H angle (96.4" in table l), in order to bring the silicon layer closer to the carbon layer and reduce Si,+ bond length.…”

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confidence: 99%

A theoretical study of the formation of the beta -SiC (001)/Si (001) heterojunction

Craig¹

1993

Semicond. Sci. Technol.

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Aisiraci. in inis paper a ineoreiicai siudy of iine formation of a heierojunciion between a Si (001) substrate and a very thin film of the more atomically dense 0-SIC (001) is presented. The structures that describe the deposition of the first layer of carbon and then the subsequent deposition of two further layers, one of silicon and the other carbon, to form the polar Sic film are discussed. In each case the atomic structure is determined from minimizing t h e total energy with respect to variations in ihe aiomic coordinates. The iormaiion of i n e inieriace beiween ihne polar Sic film and the silicon substrate is found to give rise to a distinct dipole within the top two layers of t h e silicon substrate. Valence electron charge is transferred from the first silicon layer to the second silicon layer.

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Atomic probe imaging of β-SiC thin films grown on (100) Si

Cited by 13 publications

References 7 publications

Influence of substrate temperature on formation of an SiC buffer layer by reaction of Si(100) with silane-methane plasma

Influence of substrate temperature on formation of an SiC buffer layer by reaction of Si(100) with silane-methane plasma

Formation of a SiC buffer layer by reaction of Si (100) with methane and hydrogen plasma

A theoretical study of the formation of the beta -SiC (001)/Si (001) heterojunction

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