Material contrasts which were dependent on the doping were seen on integrated circuits during examination with the photoemission electron microscope (PEEM). Surface studies using the PEEM, Auger electron spectroscopy (AES), and secondary ion mass spectroscopy (SIMS) showed that these material contrasts can be traced to doping dependent coverage of the silicon surface by hydrocarbons.
Materialunterschiede, die von der Dotierung abhängig sind, werden an integriertenSi‐Stromkreisen durch Oberflächenuntersuchungen mit dem Elektronenmikroskop,durch Auger‐Spektroskopie und Sekundärionen‐Massenspektroskopie festgestellt.l Dabei handelt es sich um Verunreinigungen durch Kohlenwasserstoffe.
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