Investigations of Carbon Residues on Surfaces of Silicon Integrated Circuits

Abstract

Material contrasts which were dependent on the doping were seen on integrated circuits during examination with the photoemission electron microscope (PEEM). Surface studies using the PEEM, Auger electron spectroscopy (AES), and secondary ion mass spectroscopy (SIMS) showed that these material contrasts can be traced to doping dependent coverage of the silicon surface by hydrocarbons.