We demonstrate λ∼3.5 μm and λ∼3.3 μm strain compensated In0.7Ga0.3As/AlAs(Sb)/InP quantum cascade lasers operating in pulse regime at temperatures up to at least 400 K. Peak optical power exceeding 3.5 W at 300 K has been achieved at both wavelengths for 10 μm wide 4 mm long lasers with high reflectivity coated back facets. Threshold current densities of 2.5 kA/cm2 and 3.5 kA/cm2 have been observed at 300 K for the devices emitting at λ∼3.5 μm and λ∼3.3 μm, respectively.
We demonstrate m GaAs/Al Ga As quantum cascade lasers (QCLs) operating up to 320 K. Metal-organic vapor phase epitaxy has been used throughout for the growth of the devices. Detailed comparison has been carried out for the QCLs with various waveguides and grown on (100) GaAs substrates with different miscut angles towards (111)A. Introduction of InGaP cladding layers into the optical waveguide significantly improves the QCL performance due to a better optical confinement and lower waveguide losses compared with the GaAs-based waveguide. A 20-m-wide 4-mm-long device with high reflectivity coating on the laser back facet demonstrates room-temperature pulsed output power of 220 mW and a lowered threshold current density of 6.5 kA/cm .
Index Terms-Midinfrared quantum cascade lasers (QCLs), optical waveguide.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.