Tellurium-modified silicon nanowires with a large negative temperature coefficient of resistance Appl. Phys. Lett. 101, 133111 (2012) Tapered and aperiodic silicon nanostructures with very low reflectance for solar hydrogen evolution Appl. Phys. Lett. 101, 133906 (2012) Minimizing scattering from antireflective surfaces replicated from low-aspect-ratio black silicon Appl. Phys. Lett. 101, 131902 (2012) Robust hydrophobic Fe-based amorphous coating by thermal spraying Appl. Phys. Lett. 101, 121603 (2012) Influence of high temperature on solid state nuclear track detector parameters Rev. Sci. Instrum. 83, 093502 (2012) Additional information on J. Appl. Phys.Successful ex situ and in situ cleaning procedures for AlN and GaN surfaces have been investigated and achieved. Exposure to HF and HCl solutions produced the lowest coverages of oxygen on AlN and GaN surfaces, respectively. However, significant amounts of residual F and Cl were detected. These halogens tie up dangling bonds at the nitride surfaces hindering reoxidation. The desorption of F required temperatures Ͼ850°C. Remote H plasma exposure was effective for removing halogens and hydrocarbons from the surfaces of both nitrides at 450°C, but was not efficient for oxide removal. Annealing GaN in NH 3 at 700-800°C produced atomically clean as well as stoichiometric GaN surfaces.

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The techniques (temperature range of study) of in situ thermal desorption (500-1100ЊC) and chemical vapor cleaning (CVC) via exposure to SiH 4 and/or C 2 H 4 (750-1100ЊC) have been investigated for preparing 6H SiC [(0001) Si , (0001 ෆ) C , (112 ෆ0), and (101 ෆ0)] surfaces suitable for epitaxial growth of SiC and III-nitride films, and are compared with regard to surface purity, stoichiometry, and structural order. Oxide removal below the detection limits of Auger electron spectroscopy was achieved for all orientations via annealing in 200 L SiH 4 at 850-900ЊC or Ϸ200Њ lower than necessary by thermal desorption. No non-SiC carbon was detected on the surface by X-ray photoelectron spectroscopy. An approximately one-tenth of a monolayer of oxygen coverage and significant quantities of non-SiC carbon were detected for all 6H-SiC surfaces prepared by thermal desorption. In contrast to the predominantly non-SiC carbon-rich surfaces prepared by thermal desorption, the stoichiometry of the SiC surfaces prepared by CVC could be manipulated from Si-rich to C-rich without non-SiC carbon formation by either extending the SiH 4 exposures or by following with C 2 H 4 exposure. The latter surfaces also had lower concentrations of both oxygen and non-SiC carbon and increased surface order.

This study addresses the formation of roughness and near surface defects on Si(100) surfaces that are exposed to a remotely excited H plasma. The remote H plasma processing can be employed for in situ wafer cleaning. Atomic force microscopy, transmission electron microscopy, and residual gas analysis are used to measure the surface roughness, the near surface defects, and the etching, respectively. For remote H plasma exposures at substrate temperatures ≤300 °C, etching is observed along with a significant increase in the surface roughness and the formation of platelet defects in the near surface region. As the substrate temperature is increased to above 450 °C, etching is significantly reduced and no subsurface defects or increases in surface roughness are observed.