When a crystal deforms plastically, phenomena such as dislocation storage, multiplication, motion, pinning, and nucleation occur over the submicron-to-nanometer scale. Here we report measurements of plastic yielding for single crystals of micrometer-sized dimensions for three different types of metals. We find that within the tests, the overall sample dimensions artificially limit the length scales available for plastic processes. The results show dramatic size effects at surprisingly large sample dimensions. These results emphasize that at the micrometer scale, one must define both the external geometry and internal structure to characterize the strength of a material.

In this paper we present a mechanical test methodology to explore specimen size effects in Ni3Al, where the overall test sample dimensions artificially limit the volume for substructure evolution and hence the availability of jogs/kinks along individual dislocation lines. The test methodology consists of using Focused Ion Beam milling to micromachine cylindrical compression samples that have diameters ranging from 5 to 20 microns into the surface of a bulk sample, which is followed by nanoindentation using a flat-ended tip to measure the mechanical properties of the microsamples in uniaxial compression. The initial test results show that there is a strong increase in the flow stress with decreasing sample size, although misfit between the flat indenter tip and the top surface of the compression samples complicates complete interpretation of the mechanical test results at this time.

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We have developed a microbeam bending technique for determining elastic-plastic, stress-strain relations for thin metal films on silicon substrates. The method is similar to previous microbeam bending techniques, except that triangular silicon microbeams are used in place of rectangular beams. The triangular beam has the advantage that the entire film on the top surface of the beam is subjected to a uniform state of plane strain as the beam is deflected, unlike the standard rectangular geometry where the bending is concentrated at the support. To extract the average stress-strain relations for the film, we present a method of analysis that requires computation of the neutral plane for bending, which changes as the film deforms plastically. This method can be used to determine the elastic-plastic properties of thin metal films on silicon substrates up to strains of about 1%.Utilizing this technique, both yielding and strain hardening of Cu thin films on silicon substrates have been investigated. Copper films with dual crystallographic textures and different grain sizes, as well as others with strong /1 1 1S textures have been studied. Three strongly textured /1 1 1S films were studied to examine the effect of film thickness on the deformation properties of the film. These films show very high rates of work hardening, and an ARTICLE IN PRESS www.elsevier.com/locate/jmps 0022-5096/$ -see front matter r increase in the yield stress and work hardening rate with decreasing film thickness, consistent with current dislocation models. r

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The competition between dislocation slip and twinning in tantalum single crystals has been investigated utilizing a crystal level twinning model and the results from gas gun recovery experiments conducted at peak normal stresses of 25 and 55 GPa. The recovered samples were characterized using electron back scattered diffraction, and the observed twining fractions were compared with the model. The experimental results show very low twin fractions in all orientations at 25 GPa; and that among (100), (110), (111), and (123) crystals the (110) crystals had the largest amount of twinning at 55GPa. The analysis shows that the general trends observed in the experimental data can be reproduced by the model when an orientation dependent dislocation evolution is used. This analysis gives insight into the possible influence of the dislocation density and its evolution on the observed twinning behavior.