A new integration concept for MEMS-devices to ceramic substrates based on a new bonding technique between nano-scaled black silicon (BSi) and an adapted LTCC substrate is presented. The novel technique allows combining advantages of silicon and ceramic technology whereby a new wafer compound material (silicon on ceramics) and innovative ceramic carrier as well as chip packages become available. The new compound is fabricated by the use of standard technologies (reactive ion etching, lamination, and pressure assisted sintering) without additional materials and devices. A bonding strength up to 1750 N/cm2 and gas tightness are remarkable features of the bond interface. Simultaneously, electrical interconnects between silicon and LTCC can be manufactured during lamination and sintering.

A useful method to investigate depth profiles of the minority carrier lifetime, internal quantum efficiency and doping concentration in zinc diffused GaAs LED's is described. The depth profiles are measured by the photoluminescence technique after subsequent removal of thin layers. At a surface zinc concentration of about 1019 cm−3 the light output power of the LED's, the minority carrier lifetime, and the photoluminescence intensity reach maximum values. From the depth profiles the influence of the reabsorption coefficient and the p‐n junction depths on the light output power is shown. The results are confirmed by electroluminescence measurements.