Photoemission and electric transport properties of ferromagnet-insulator-ferromagnet junctions with boron carbide (C 2 B 10) dielectric barrier are presented. Using a non-oxide barrier confidence avoids oxidation of the interfaces with the ferromagnetic layers. Photoemission confirms chemical abruptness of the interface. Magnetoresistance ratios reaching 50% are observed at low temperatures, and large nonlinearity in the current-voltage curves show that impurities in the junctions play a key role.
Some thermal switch designs are discussed in which a 4He actuated bellows is used to make or break mechanical contact between two sections containing metallic surfaces. Techniques are discussed which permit the switch sections to make thermal contact to liquid 3He by employing a large liquid−solid surface area. Designs are presented for a Pomeranchuk cell and an adiabatic demagnetization cell, which incorporate the bellows−actuated mechanical switch concept.
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