Field oxide thinning in a modified LOCOS process is examined. Using electron beam lithography, thinning in active area spacings as narrow as 0.1 ~m has been observed for the first time. Also, the cause of thinning is shown to be compressive stress in the field oxide, not two-dimensional oxidant diffusion as has been previouslY asserted. A phenomenological model for field oxide thinning is given. Finally, a new figure of merit is defined which assesses the combined effects of encroachment and field oxide thinning in isolation processes for submicron integrated circuits.) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 130.237.29.138 Downloaded on 2015-03-08 to IP
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