,4bsfrad-The stability of both resistor-load (R-load) and full-(2MOS SRAM cells is investigated analytically as well as by simulation. Explicit analytic expressions for the static-noise margin (SNM) as a function of device parameters and supply voltage are derived. The expressions are useful in predicting tbe effect of parameter changes on the stability as well as in optimizing the design of SRAM cells. An easy-to-use SNM simulation method is presented, the results of which are iir good agreement with the results predicted by the analytic SNM expressions. It is further concluded that full-CMOS cells are much more stable than R-load cells at a low supply voltage.

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