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The InAs/Ga1−xInxSb strained-layer superlattice (SLS) holds promise as an alternative III–V semiconductor system for long wavelength infrared detectors. In this article, we present the first investigation, to the best of our knowledge, of heterojunction photodiodes using this new material. The devices were grown by molecular beam epitaxy on GaSb substrates, and are comprised of a 38 Å InAs/16 Å Ga0.64In0.36Sb SLS used in double heterojunctions with GaSb contact layers. The structures were designed to optimize the quantum efficiency while minimizing transport barriers at the heterointerfaces. The photodiodes are assessed through the correlation of their performance with the SLS material quality and the detector design. X-ray diffraction, absorption, and Hall measurements are used to determine the SLS material properties. The electrical and optical properties of the photodiodes are determined using current–voltage and spectral responsivity measurements. At 78 K, these devices exhibit rectifying electrical behavior and photoresponse out to a wavelength of 10.6 μm corresponding to the SLS energy gap. The responsivity and resistance in these thin-layered (0.75 μm), unpassivated photodiodes result in a detectivity of 1×1010 cm √Hz/W at 8.8 μm and 78 K. Based upon the performance of these devices, we conclude that high-sensitivity operation of long-wavelength photovoltaic detectors at temperatures well in excess of conventional III–V band gap-engineered systems, and potentially in excess of HgCdTe, is feasible using this material system.

We investigate the synthesis of kesterite Cu 2 ZnSnS 4 (CZTS) polycrystalline thin films using cosputtering from binary sulfide targets followed by annealing in sulfur vapor at 500°C to 650°C. The films are the kesterite CZTS phase as indicated by x-ray diffraction, Raman scattering, and optical absorption measurements. The films exhibit (112) fiber texture and preferred low-angle and R3 grain boundary populations which have been demonstrated to reduce recombination in Cu(In,Ga)Se 2 and CdTe films. The grain growth kinetics are investigated as functions of temperature and the addition of Na. Significantly, lateral grain sizes above 1 lm are demonstrated for samples grown on Na-free glass, demonstrating the feasibility for CZTS growth on substrates other than soda lime glass.

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Molecular beam epitaxy was employed for the growth of HgCdTe-based n-p + -n device structures on (211)B oriented CdZnTe substrates. The device structures were processed as mesa isolated diodes, and operated as back-to-back diodes for the simultaneous detection of two closely spaced sub-bands in the mid-wave infrared spectrum. The devices were characterized by R 0 A values in excess of 5 × 10 5 Ω cm 2 at 78K, at f/2 fov and quantum efficiencies greater than 70% in each band. Infrared imagery from a focal plane array with 128 × 128 pixels was acquired simultaneously from each band at temperatures between 77 to 180K, with no observable degradation in the image quality with increase in temperature.

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