On the basis of the Read theory the position of dislocation acceptor level in n‐type germanium was determined. It amounts to 0.13 to 0.18 eV below the bottom of the conduction band and is independent of the type of introduced dislocations. The influence of the inhomogeneity of deformations and non‐dislocation defects generated in the course of heating and deformation on the precision of determination of the position of dislocation level was taken into account. — Diffusion of impurities was reduced to minimum by covering the samples with tin. A strong effect on non‐dislocation defects generated in the processes of heating and deformation on mobility and magnetoresistance was detected as well as some changes in mobility for the current flow parallel to the direction of dislocation lines.
On the basis of the Read theory theposition cf a dislocation acceptor level in n-type germanium was determined. It amounts to 0.13 to 0.18 eV below the bottom of the conduction band and is independent of the type of introduced dislocations. The influence of the inhomogeneity of deformations and non-dislocation de€ects generated in the course of heating and deformation on the precision of determination of the position of dislocation level was taken into account. -Diffusion of impurities was reduced to minimum by covering the samples with tin. A strong effect of non-dislocation defects generated in the processes of heating and deformation on mobility and magnetoresistance was detected as well as some changes in mobility for the current flow parallel to the direction of dislocation lines.Auf Grund der Readschen Theorie wurde die Lage des Versetzungsakzeptorniveaus in n-leitendem Ge bestimmt. Es liegt 0,13 bis 0,18 eV unter der Leitungsbandkante und ist unabhangig von der Art der eingefuhrten Versetzungen. Der EinfluD der Inhomogenitat der Deformation und der Punktdefekte, die wahrend des Deformationsprozesses eingefiihrt werden, auf die Genauigkeit der Bestimmung der Lage des Versetzungsniveaus wurde in Betracht gezogen. -Durch Belegen der Oberflachen der Proben mit Sn wurde die Diffusion der Fremdatome auf ein Minimum herabgesetzt. Es wurde ein sehr starker EinfluB von Defekten, die nicht von Versetzungen herriihren und wahrend der Deformation eingefuhrt wurden, auf die Beweglichkeit und die magnetische Widerstandsanderung beobachtet. Eine Anderung der Beweglichkeit bei StromfluD parallel zur Versetzungsrichtung wurde festgestellt.Determination of the position of a dislocation acceptor level in n-type germanium has been the subject of a number of papers. Table 1 shows the results obtained. As one can easily notice there exist considerable differences in defining the position of the level determined not only by various methods but also determined by means of the same method but by different authors.As proved in the paper of Broudy [3] the differences might be caused by the inhomogeneity of deformed crystals.Deformation of crystals a t high temperatures is accompanied by the generation or annealing of various types of point defects affecting their electric properties. Interaction between these defects and dislocations that causes changes in dislocation properties is also possible, Phenomena taking place in the course of the deformation process are complicated and depend on the temperature of deformation, its duration, cooling rate, and the orientation of deformed crystals. I n some experiments [3] the diffusion of impurities in the process of deformation is not eliminated. Numerous authors carried out electrical measurements of deformed crystals differently oriented and deformed a t various temperatures.
The X-ray diffraction contrast a t the boundary implanted-nonimplanted regions was investigated for a Si single crystal implanted with low energy P+ ions (60 keV, dose 5 x x l O I 5 ions/cmz). The transmission Lang topographs obtained using MoKa, radiation and double crystal reflection topographs using CUKE radiation a r e presented. Some information on the region near the boundary is deduced from analysis of the diffraction contrast.An einem mit P+-Ionen geringer Energie (60 keV, Dosis 5 x 1015 Ionen/cm2) implantierten Si-Einkristall wurde der Rontgenbeugungskontrast a n der Grenze zwischen implantiertem und nichtimplantiertem Gebiet untersucht. Die Transmissionstopogramme (Lang-Methode, MoKa,-Strahlung) und Doppelkristallreflexionstopogramme mit CuKa-Strahlung werden wiedergegeben. Aus der Analyse des Beugungskontrastes werden Informationen iiber die Gitterdeformation in der Niihe der Grenze abgeleitet.
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