Electric Properties of Dislocations in n‐Type Germanium

Abstract

On the basis of the Read theory the position of dislocation acceptor level in n‐type germanium was determined. It amounts to 0.13 to 0.18 eV below the bottom of the conduction band and is independent of the type of introduced dislocations. The influence of the inhomogeneity of deformations and non‐dislocation defects generated in the course of heating and deformation on the precision of determination of the position of dislocation level was taken into account. — Diffusion of impurities was reduced to minimum by covering the samples with tin. A strong effect on non‐dislocation defects generated in the processes of heating and deformation on mobility and magnetoresistance was detected as well as some changes in mobility for the current flow parallel to the direction of dislocation lines.

A Study on Measuring Techniques of Phase Velocities of Surface Acoustic Waves

“…For instance, conductivity and Hall-effect measurements were performed by Willoughby [18] in London, van Weeren et al [19] in Amsterdam, Kryłow and Auleytner [20,21] in Warsaw, Gondi and Cavallini [22] in Bologna. Much more detailed investigations were performed by Schröter and Labusch [23,24] in Göttingen, who interpreted the results in terms of a one-dimensional energy band of dislocations.…”

Electric Properties of Dislocations in p‐Type Germanium

“…Similarly as for the n-type germanium [5] in the present paper single crystals of p-type germanium underwent plastical deformation by bending and measurements of temperature dependence of concentration were carried out for them on the basis of the measurements of Hall constant p = 1/Re. Primary samples came from different sources.…”

“…Similarly as changes of Concentration, changes of mobility connected with deformation are to a large extent limited by nondislocation defects generated thermically in the process of deformation (precipitation of acceptors on dislocations probably plays the most important part here). *) The direction of the current perpendicular t o dislocations [5]. **) The direction of the current parallel to dislocations [5].…”

“…*) The direction of the current perpendicular t o dislocations [5]. **) The direction of the current parallel to dislocations [5]. ***) Oriented a8 in [5].…”

“…**) The direction of the current parallel to dislocations [5]. ***) Oriented a8 in [5]. Table 1 gives the source from which the crystals come, their orientation, condit,ions of deformation, i.e.…”