Although the local resistivity of semiconducting silicon in its standard crystalline form can be changed by many orders of magnitude by doping with elements, superconductivity has so far never been achieved. Hybrid devices combining silicon's semiconducting properties and superconductivity have therefore remained largely underdeveloped. Here we report that superconductivity can be induced when boron is locally introduced into silicon at concentrations above its equilibrium solubility. For sufficiently high boron doping (typically 100 p.p.m.) silicon becomes metallic. We find that at a higher boron concentration of several per cent, achieved by gas immersion laser doping, silicon becomes superconducting. Electrical resistivity and magnetic susceptibility measurements show that boron-doped silicon (Si:B) made in this way is a superconductor below a transition temperature T(c) approximately 0.35 K, with a critical field of about 0.4 T. Ab initio calculations, corroborated by Raman measurements, strongly suggest that doping is substitutional. The calculated electron-phonon coupling strength is found to be consistent with a conventional phonon-mediated coupling mechanism. Our findings will facilitate the fabrication of new silicon-based superconducting nanostructures and mesoscopic devices with high-quality interfaces.

The three central phenomena of cuprate superconductors are linked by a common doping p*, where the enigmatic pseudogap phase ends, around which the superconducting phase forms a dome, and at which the resistivity exhibits an anomalous linear dependence on temperature as T → 0 (ref. 1). However, the

Homoepitaxial diamond layers doped with boron in the 10(20)-10(21) cm(-3) range are shown to be type II superconductors with sharp transitions (approximately 0.2 K) at temperatures increasing from 0 to 2.1 K with boron contents. The critical concentration for the onset of superconductivity in those 001-oriented single-crystalline films is about 5-7 10(20) cm(-3). The H-T phase diagram has been obtained from transport and ac-susceptibility measurements down to 300 mK.

The β-Bi 2 Pd compound has been proposed as another example of a multigap superconductor [Imai et al., J. Phys. Soc. Jpn. 81, 113708 (2012)]. Here, we report on measurements of several important physical quantities capable of showing a presence of multiple energy gaps on our superconducting single crystals of β-Bi 2 Pd with the critical temperature T c close to 5 K. The calorimetric study via a sensitive ac technique shows a sharp anomaly at the superconducting transition, however only a single energy gap is detected. Also other characteristics inferred from calorimetric measurements as the field dependence of the Sommerfeld coefficient and the temperature and angular dependence of the upper critical magnetic field point unequivocally to standard single s-wave gap superconductivity. The Hall-probe magnetometry provides the same result from the analysis of the temperature dependence of the lower critical field. A single-gapped BCS density of states is detected by the scanning tunneling spectroscopy measurements. Then, the bulk as well as the surface sensitive probes evidence a standard conventional superconductivity in this system where the topologically protected surface states have been recently detected by angle-resolved photoemission spectroscopy [Sakano et al., Nat. Commun. 6, 8595 (2015).].

International audienceWe report on a detailed analysis of the superconducting properties of boron-doped silicon films grown along the 001 direction by gas immersion laser doping. The doping concentration c(B) has been varied up to similar to 10 at. % by increasing the number of laser shots to 500. No superconductivity could be observed down to 40 mK for doping level below similar to 2 at. %. The critical temperature T(c) then increased steeply to reach similar to 0.6 K for c(B) similar to 8 at. %. No hysteresis was found for the transitions in magnetic field, which is characteristic of a type II superconductor. The corresponding upper critical field mu(o)H(c2) (0) was on the order of 1000 G, much smaller than the value previously reported by Bustarret et al. [E. Bustarret et al., Nature (London) 444, 465 (2006)]

We use sub-Kelvin scanning tunneling spectroscopy to investigate the suppression of superconductivity in homogeneously disordered ultrathin MoC films. We observe that the superconducting state remains spatially homogeneous even on the films of 3 nm thickness. The vortex imaging suggests the global phase coherence in our films. Upon decreasing thickness, when the superconducting transition drops from 8.5 to 1.2 K, the superconducting energy gap  follows perfectly T c . All this is pointing to a two-stage fermionic scenario of the superconductor-insulator transition (SIT) via a metallic state as an alternative to the direct bosonic SIT scenario with a Cooper-pair insulating state evidenced by the last decade STM experiments. [7][8][9][10][11][12][13] bring evidences that upon increasing disorder decreases more slowly than T c , the variation of on a scale of the superconducting coherence length  increases, a pseudogap appears above T c in the tunneling spectra, the spectral coherence peaks are suppressed, and the vortex lattice is fading out. This phenomenology strongly supports the bosonic scenario and raises the question about the universality of the bosonic SIT [14]. On the other hand, potential evidence for the fermionic mechanism was provided even sooner by the tunneling experiments on planar junctions on amorphous Bi and PbBi/Ge films [15,16] indicating that the Cooper pair amplitude vanishes at SIT. But the unambiguousness of these results was challenged by the fact that the spatially averaged tunneling spectra were gapless. This gaplessness could be explained by a very inhomogeneous gap distribution due to phase fluctuations. Then, superconducting pair correlations might also exist in insulators close to SIT, contradicting the fermionic scenario. KeywordsHere, we present sub-Kelvin STM experiments on ultra thin superconducting MoC films with atomic spatial resolution. We demonstrate the spatial homogeneity of the superconducting state for film thicknesses down to 3 nm and the closing of the superconducting energy gap/order parameter as T c vanishes, in agreement with the fermionic scenario. Thus, we bring the first direct evidence on the local behavior of the superconducting order parameter in this class of the transition.The MoC films were prepared by the magnetron reactive sputtering from a Mo target in an argon-acetylene atmosphere onto a sapphire c-cut substrate. The details can be found elsewhere [17]. The preparation followed the procedure of Lee and Ketterson [18] who manufactured continuous MoC films down to 0.4 nm thickness showing

The heat capacity of a 2H-NbS2 single crystal has been measured by a highly sensitive ac technique down to 0.6 K and in magnetic fields up to 14 T. At very low temperatures data show excitations over an energy gap (2∆S/kBTc ≈ 2.1) much smaller than the BCS value. The overall temperature dependence of the electronic specific heat Ce can be explained either by the existence of a strongly anisotropic single-energy gap or within a two-gap scenario with the large gap about twice bigger than the small one. The field dependence of the Sommerfeld coefficient γ shows a strong curvature for both principal-field orientations, parallel (H||c) and perpendicular (H ⊥ c) to the c axis of the crystal, resulting in a magnetic field dependence of the superconducting anisotropy. These features are discussed in comparison to the case of MgB2 and to the data obtained by scanning-tunneling spectroscopy. We conclude that the two-gap scenario better describes the gap structure of NbS2 than the anisotropic s-wave model.

We present the first scanning tunneling spectroscopy study of single-crystalline boron doped diamond. The measurements were performed below 100 mK with a low temperature scanning tunneling microscope. The tunneling density of states displays a clear superconducting gap. The temperature evolution of the order parameter follows the weak coupling BCS law with ∆(0)/kB Tc ≃ 1.74. Vortex imaging at low magnetic field also reveals localized states inside the vortex core that are unexpected for such a dirty superconductor. PACS numbers: 74.50.+r, 74.25.Qt, 74.78.Db The recent discovery of a superconducting transition in boron-doped diamond provides a new interesting system for the study of superconductivity in doped semiconductors [1]. In the broad band gap of diamond (∼ 5.5 eV ), boron impurities introduce an acceptor level with a hole binding energy of ∼ 0.37 eV and lead to a metallic state above a critical boron concentration in the range of a few atoms per thousand. According to the doping level, the superconducting transition is observed with a critical temperature varying between 1K and 10K [2,3].Because of the strong bonding states and the hole doping, various theoretical studies have stressed the similarity between diamond and the superconductor M gB 2 [4,5,6]. The origin of the remarkable superconductivity in M gB 2 at T c = 39K is now well understood to be a result of phonons coupled to holes in the two dimensional σ-bonding valence bands. Although the band structure of diamond is three dimensional, the superconductivity in boron doped diamond could also be due to the coupling of a few holes at the top of the valence band to the optical bond-stretching zone-center phonons [4,5] as well as to boron-related modes [6,7]. Numerical calculations of the electron-phonon coupling by the density-functional supercell method are claimed to yield a calculated T c in good agreement with experiments for at least one boron concentration [7], thus supporting that boron-doped diamond is a phonon mediated superconductor.Another theoretical approach proposed by Baskaran [8] considers diamond, a broad band insulator, to be an appropriate vacuum state for the boron subsystem; electron correlations then drive a Anderson-Mott insulator to resonating valence bond superconductor transition [9]. Because of the proximity to the boron critical density of the insulator-metal transition, the superconductivity takes place within the impurity band. In the disordered lattice of boron acceptors, such a strongly correlated impurity band is expected to give rise to an extended s-wave superconducting state.In this letter we report on low temperature tunneling spectroscopy and vortex images of superconducting hole-doped diamond films. These measurements which probe the quasiparticule excitations near the Fermi energy, show a clear BCS Local Density of States (LDOS) consistent with weak coupling. Contrary to what is expected for a dirty superconductor [10,11], a significant density of localized resonant states is found below the gap in the vorte...