Uniform, spherical-shaped TiO2:Eu nanoparticles with different doping concentrations have been synthesized through controlled hydrolysis of titanium tetrabutoxide under appropriate pH and temperature in the presence of EuCl3·6H2O. Through air annealing at 500°C for 2 h, the amorphous, as-grown nanoparticles could be converted to a pure anatase phase. The morphology, structural, and optical properties of the annealed nanostructures were studied using X-ray diffraction, scanning electron microscopy, energy-dispersive X-ray spectroscopy [EDS], and UV-Visible diffuse reflectance spectroscopy techniques. Optoelectronic behaviors of the nanostructures were studied using micro-Raman and photoluminescence [PL] spectroscopies at room temperature. EDS results confirmed a systematic increase of Eu content in the as-prepared samples with the increase of nominal europium content in the reaction solution. With the increasing dopant concentration, crystallinity and crystallite size of the titania particles decreased gradually. Incorporation of europium in the titania particles induced a structural deformation and a blueshift of their absorption edge. While the room-temperature PL emission of the as-grown samples is dominated by the 5D0 - 7Fj transition of Eu+3 ions, the emission intensity reduced drastically after thermal annealing due to outwards segregation of dopant ions.
Ge nanoparticles embedded in an oxide matrix have been obtained by (a) steam thermal oxidation at 650 • C of polycrystalline SiGe layers and (b) deposition of discontinuous Ge films/SiO 2 multilayers by low pressure chemical vapour deposition at 390 • C and thermal annealing at 700 • C. These two approaches are compared in terms of the composition and size of the nanoparticles and the luminescence properties of the structures. In both cases violet luminescence peaking at 3.1 eV is detected. The origin of this emission in both types of structures is the same and it will be related to defects at the interface between the nanocrystalline Ge and the dielectric matrix. Thinking about future applications, the second approach is found to be much more attractive from the technological point of view, even considering that the first one gives a more intense luminescence emission, since the structure can be fabricated in a single-run process; these structures are currently being investigated to improve their luminescence emission.
ZnO nanotubes were prepared by a sequential combination of electrochemical deposition, chemical attack and regeneration. ZnO nanocolumns were initially electrodeposited on conductive substrates and then converted into nanotubes by a process involving chemical etching and subsequent regrowth. The morphology of these ZnO nanocolumns and derived nanotubes was monitored by Scanning Electron Microscopy and their optical properties was studied by photoluminescence spectroscopy. Photoluminescence were measured as a function of temperature, from 6 to 300 K, for both nanocolumns and nanotubes. In order to study the behaviour of induced intrinsic defect all ZnO films were annealed in air at 400 ºC and their photoluminescent properties were also registered before and after annealing. The behaviour of photoluminescence is explained taking into account the contribution of different point defects. A band energy diagram related to intrinsic defects was proposed to describe the behaviour of photoluminescence spectra.
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