2013
DOI: 10.1016/j.optmat.2013.08.003
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Synthesis of Eu+3 doped ZnS nanoparticles by a wet chemical route and its characterization

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Cited by 56 publications
(16 citation statements)
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“…One such type of PL emission has been reported by Gupta et al due to defective levels at about 417, 499 and 480 nm. Similar results were also reported by Mathew et al with PL emission peaks at 417, 438 and 466 nm, respectively. There is more strain on the ZnS host lattice due to the presence of the interstitial sulphur, which is due to the large difference in the ionic radii of sulphur ions (1.7 Å) to that of Zn ions (0.74 Å), as a consequence of these differences electron levels for this site will have small binding energies.…”
Section: Resultssupporting
confidence: 91%
“…One such type of PL emission has been reported by Gupta et al due to defective levels at about 417, 499 and 480 nm. Similar results were also reported by Mathew et al with PL emission peaks at 417, 438 and 466 nm, respectively. There is more strain on the ZnS host lattice due to the presence of the interstitial sulphur, which is due to the large difference in the ionic radii of sulphur ions (1.7 Å) to that of Zn ions (0.74 Å), as a consequence of these differences electron levels for this site will have small binding energies.…”
Section: Resultssupporting
confidence: 91%
“…These XRD patterns are well matched with the standard JCPDS data (Card no. 80-0020) [18]. Only diffraction peaks of ZnS are present in the XRD patterns due to the small doping amount of Y 3+ impurity ions.…”
Section: Characterization Techniques X-ray Diffraction (Xrd)mentioning
confidence: 99%
“…Emission peak at 384 nm of zinc sulfide QDs is due to lattice defect. Also, the emission peak at 715 nm is related to the Eu 3+ ion due to the transition of 5 D 0 to 7 F 4 [35][36][37][38][39]. Fig.…”
Section: Pl and Ftir Analysismentioning
confidence: 99%