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The relative merits of two double diffused transistor structures are discussed, one of which employs a localized emitter. A process for producing the localized emitter structure is described employing the masking property of SiO2 against the subsequent phosphorus diffusion. The dimensions of each emitter are controlled closely by etching away this oxide mask from only those regions not protected by a specially prepared photo resist coating. Transistors have been produced which switch 30 ma with a gain of 12, in times in which the sum of the turn‐on, storage, and turn‐off time is less than 0.1 µsec. Small signal alphas of 0.97, and alpha cut‐off frequencies in the common base connection in excess of 300 mc have been achieved.

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