We have measured resonant Raman scattering and photoluminescence (PL) from Cdl Mn"Te (111) films deposited on (111)-oriented GaAs substrates. Film thickness varied from 0.6 to 1.8 pm and manganese concentrations x varied from 0.44 to 0.70 in the seven samples produced for this study using pulsed laser evaporation and epitaxy. Raman scattering shows that the films are of high quality throughout the composition range. The "CdTe-like" and "MnTe-like" LO-phonon modes appear in combinations up to the eighth order at 13 K under outgoing resonance conditions near the Eo gap PL emission peak. Using Raman LO-phonon energy-composition relations reported in the literature for bulk Cd, , Mn"Te, we have estimated the film Mn compositions and found them to be in close agreement with values obtained using energy-dispersive x-ray analysis (EDAX). The PL peak energy was also used to estimate the manganese composition. The best agreement with the Raman and EDAX determinations results when the PL emission is interpreted as being due to a neutral acceptor-bound magnetic polaron instead of an exciton process.The bulk Cd, , Mn"Te (CMT) semiconductor alloy system has been studied extensively because of the wide tunability of its gap (1.58 to 2.30 eV as x ranges from 0 to 0.7) and the many novel properties and potential applica-
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