Photoluminescence of CdTe-Cd1−xMnxTe multiple quantum well at high pressure

Yenice, Kamil M.; Lee, S. A.; Venkateswaran, U. D.; Williamson, W. S.; Dubowski, J.J.

doi:10.1063/1.46406

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Bandgap Engineering By Pulsed Laser Deposition (Pld)1

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2020

2021

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“…The difference between the most energetic state in the valance band and the lowest energy state in the conduction band determines the QW energy gap, E g QW , (a). Example of room-temperature photoluminescence spectrum from a GaAs/Al 0.35 Ga 0.65 As QW microstructure (b) (Aithal et al 2017) (1993); Adachi et al (1994); Yenice et al (1994); Labrie and Dubowski (1994;Takagi et al (1994); Syme et al (1997); Lockwood et al (1998).…”

Section: Bandgap Engineering By Pulsed Laser Deposition (Pld)mentioning

confidence: 99%

Bandgap Engineering of Quantum Semiconductor Microstructures

Dubowski¹

2020

Handbook of Laser Micro- And Nano-Engineering

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unattainable with conventional methods of fabrication. This chapter provides a review of the laser-based methods for fabrication of quantum semiconductor microstructures with bandgap engineered at the atomic level. The discussion involves bandgap engineering by pulsed laser deposition and quantum well/ quantum dot intermixing techniques employing IR and UV lasers for the general area of application concerning monolithically integrated photonic devices.

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